National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Key Laboratory for Thin Film and Microfabrication of Ministry of Education, Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, P. R. China.
Small. 2023 Apr;19(17):e2207538. doi: 10.1002/smll.202207538. Epub 2023 Mar 8.
Black phosphorus nanoribbons (PNRs) are ideal candidates for constructing electronic and optoelectronic devices owing to their unique structure and high bandgap tunability. However, the preparation of high-quality narrow PNRs aligned along the same direction is very challenging. Here, a reformative mechanical exfoliation approach combining tape and polydimethylsiloxane (PDMS) exfoliations to fabricate high-quality, narrow, and directed PNRs with smooth edges for the first time is developed. In this method, partially-exfoliated PNRs are first formed on thick black phosphorus (BP) flakes via the tape exfoliation and further peeled off to obtain separated PNRs via the PDMS exfoliation. The prepared PNRs have widths from a dozen to hundreds of nanometers (down to 15 nm) and a mean length of 18 µm. It is found that the PNRs can align along a same direction and the length directions of directed PNRs are along the zigzag direction. The formation of PNRs is attributed to that the BP prefers to be unzipped along the zigzag direction and has an appropriate magnitude of interaction force with the PDMS substrate. The fabricated PNR/MoS heterojunction diode and PNR field-effect transistor exhibit good device performance. This work provides a new pathway to achieve high-quality, narrow, and directed PNRs for electronic and optoelectronic applications.
黑磷纳米带(PNRs)由于其独特的结构和高带隙可调谐性,是构建电子和光电子器件的理想候选材料。然而,制备高质量、沿同一方向排列的窄 PNRs 具有很大的挑战性。在这里,首次开发了一种革新的机械剥离方法,将胶带和聚二甲基硅氧烷(PDMS)剥离相结合,制备出高质量、窄且沿同一方向排列、边缘光滑的 PNRs。在该方法中,首先通过胶带剥离在厚黑磷(BP)薄片上形成部分剥离的 PNRs,然后通过 PDMS 剥离将其进一步剥离以获得分离的 PNRs。所制备的 PNRs 的宽度从十几个到几百纳米(低至 15nm),平均长度为 18µm。研究发现,PNRs 可以沿同一方向排列,定向 PNRs 的长度方向沿锯齿方向。PNRs 的形成归因于 BP 沿锯齿方向优先被解开,并且与 PDMS 基底具有适当大小的相互作用力。所制备的 PNR/MoS 异质结二极管和 PNR 场效应晶体管表现出良好的器件性能。这项工作为电子和光电子应用提供了一种实现高质量、窄且沿同一方向排列的 PNRs 的新途径。