Gao Ruisi, He Xin, Chen Chao, Bao Xiaoqing, Yang Feifan, Yang Xuke, He Jungang, Dong Chong, Li Chuanhao, Chen Shuo, Liang Guangxing, Jiang Shenglin, Tang Jiang, Zhang Guangzu, Li Kanghua
School of Integrated Circuits, Engineering Research Center for Functional Ceramics MOE, Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China.
Key Laboratory of Optoelectronic Chemical Materials and Devices of Ministry of Education, Jianghan University, Wuhan, 430056, P. R. China.
Small. 2024 Mar;20(9):e2308070. doi: 10.1002/smll.202308070. Epub 2023 Oct 17.
Short-wavelength infrared photodetectors play a significant role in various fields such as autonomous driving, military security, and biological medicine. However, state-of-the-art short-wavelength infrared photodetectors, such as InGaAs, require high-temperature fabrication and heterogenous integration with complementary metal-oxide-semiconductor (CMOS) readout circuits (ROIC), resulting in a high cost and low imaging resolution. Herein, for the first time, a low-cost, high-performance, high-stable, and thin-film transistor (TFT) ROIC monolithic-integrated (Bi,Sb) Se alloy thin-film short-wavelength infrared photodetector is reported. The (Bi,Sb) Se alloy thin-film short-wavelength infrared photodetectors demonstrate a high external quantum efficiency (EQE) of 21.1% (light intensity of 0.76 µW cm ) and a fast response time (3.24 µs). The highest EQE is about two magnitudes than that of the extrinsic photoconduction of Sb Se (0.051%). In addition, the unpackaged devices demonstrate high electric and thermal stability (almost no attenuation at 120 °C for 312 h), showing potential for in-vehicle applications that may experient such a high temperature. Finally, both the (Bi,Sb) Se alloy thin film and n-type CdSe buffer layer are directly deposited on the TFT ROIC (with a 64 × 64-pixel array) with a low-temperature process and the material identification and imaging applications are presented. This work is a significant breakthrough in ROIC monolithic-integrated short-wavelength infrared imaging chips.
短波红外光电探测器在自动驾驶、军事安全和生物医药等多个领域发挥着重要作用。然而，诸如铟镓砷等先进的短波红外光电探测器需要高温制造以及与互补金属氧化物半导体（CMOS）读出电路（ROIC）进行异质集成，这导致成本高昂且成像分辨率较低。在此，首次报道了一种低成本、高性能、高稳定性且薄膜晶体管（TFT）ROIC单片集成的（铋，锑）硒合金薄膜短波红外光电探测器。（铋，锑）硒合金薄膜短波红外光电探测器展现出21.1%的高外量子效率（EQE）（光强为0.76 μW/cm）以及快速响应时间（3.24 μs）。最高EQE比锑化硒的非本征光电导（0.051%）高出约两个数量级。此外，未封装的器件展现出高电气和热稳定性（在120°C下312小时几乎无衰减），显示出在可能经历如此高温的车载应用中的潜力。最后，（铋，锑）硒合金薄膜和n型硒化镉缓冲层均通过低温工艺直接沉积在具有64×64像素阵列的TFT ROIC上，并展示了材料识别和成像应用。这项工作是ROIC单片集成短波红外成像芯片方面的一项重大突破。
