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不同化学计量比的氧化硅薄膜在中红外波段的光学性质

Optical Properties in Mid-Infrared Range of Silicon Oxide Thin Films with Different Stoichiometries.

作者信息

Herguedas Natalia, Carretero Enrique

机构信息

Departamento de Física Aplicada, Universidad de Zaragoza, C/Pedro Cerbuna, 12, 50009 Zaragoza, Spain.

出版信息

Nanomaterials (Basel). 2023 Oct 12;13(20):2749. doi: 10.3390/nano13202749.

DOI:10.3390/nano13202749
PMID:37887900
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10609603/
Abstract

SiO thin films were prepared using magnetron sputtering with different O flow rates on a silicon substrate. The samples were characterized using Fourier transform infrared spectroscopy in transmission and reflection, covering a spectral range of 5 to 25 μm. By employing a multilayer model, the values of the complex refractive index that best fit the experimental transmission and reflection results were optimized using the Brendel-Bormann oscillator model. The results demonstrate the significance of selecting an appropriate range of O flow rates to modify the SiO stoichiometry, as well as how the refractive index values can be altered between those of Si and SiO in the mid-infrared range.

摘要

采用磁控溅射在硅衬底上以不同的氧流量制备了SiO薄膜。使用傅里叶变换红外光谱仪在透射和反射模式下对样品进行表征，光谱范围覆盖5至25μm。通过采用多层模型，利用Brendel-Bormann振子模型优化了最符合实验透射和反射结果的复折射率值。结果表明了选择合适的氧流量范围来改变SiO化学计量比的重要性，以及在中红外范围内折射率值如何在Si和SiO的折射率值之间变化。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a920/10609603/2e78fda42d7d/nanomaterials-13-02749-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a920/10609603/fb006a367bf8/nanomaterials-13-02749-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a920/10609603/232ec514233c/nanomaterials-13-02749-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a920/10609603/c05f48b087fb/nanomaterials-13-02749-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a920/10609603/660021c9d878/nanomaterials-13-02749-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a920/10609603/6fba7ec4cb4c/nanomaterials-13-02749-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a920/10609603/2e78fda42d7d/nanomaterials-13-02749-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a920/10609603/fb006a367bf8/nanomaterials-13-02749-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a920/10609603/232ec514233c/nanomaterials-13-02749-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a920/10609603/c05f48b087fb/nanomaterials-13-02749-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a920/10609603/660021c9d878/nanomaterials-13-02749-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a920/10609603/6fba7ec4cb4c/nanomaterials-13-02749-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a920/10609603/2e78fda42d7d/nanomaterials-13-02749-g006.jpg

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Dielectric function of sputter-deposited silicon dioxide and silicon nitride films in the thermal infrared.溅射沉积二氧化硅和氮化硅薄膜在热红外波段的介电函数
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