Peiroten Lucia, Zrenner Eberhart, Haq Wadood
Neuroretinal Electrophysiology and Imaging, Institute for Ophthalmic Research, Eberhard-Karls-Universität Tübingen, 72076 Tübingen, Germany.
Bioengineering (Basel). 2023 Oct 16;10(10):1208. doi: 10.3390/bioengineering10101208.
The electrical stimulation (stim) of retinal neurons enables blind patients to experience limited artificial vision. A rapid response outage of the stimulated ganglion cells (GCs) allows for a low visual sensation rate. Hence, to elucidate the underlying mechanism, we investigated different stim parameters and the role of the neuromodulator calcium (Ca).
Subretinal stim was applied on retinal explants (blind mouse) using multielectrode arrays (MEAs) or single metal electrodes, and the GC activity was recorded using Ca imaging or MEA, respectively. Stim parameters, including voltage, phase polarity, and frequency, were investigated using specific blockers.
At lower stim frequencies (<5 Hz), GCs responded synaptically according to the stim pulses (stim: biphasic, cathodic-first, -1.6/+1.5 V). In contrast, higher stim frequencies (≥5 Hz) also activated GCs directly and induced a rapid GC spike response outage (<500 ms, MEA recordings), while in Ca imaging at the same frequencies, increased intracellular Ca levels were observed.
Our study elucidated the mechanisms involved in stim-dependent GC spike response outage: sustained high-frequency stim-induced spike outage, accompanied by electrogenically clamped intracellular Ca levels at elevated levels. These findings will guide future studies optimizing stim paradigms for electrical implant applications for interfacing neurons.
对视网膜神经元进行电刺激可使盲人患者体验到有限的人工视觉。受刺激的神经节细胞(GCs)快速的反应中断导致视觉感受率较低。因此,为阐明其潜在机制,我们研究了不同的刺激参数以及神经调节因子钙(Ca)的作用。
使用多电极阵列(MEA)或单金属电极对视网膜外植体(盲鼠)进行视网膜下刺激,并分别使用钙成像或MEA记录GCs的活性。使用特定阻滞剂研究刺激参数,包括电压、相位极性和频率。
在较低的刺激频率(<5Hz)下,GCs根据刺激脉冲产生突触反应(刺激:双相,阴极优先,-1.6/+1.5V)。相比之下,较高的刺激频率(≥5Hz)也直接激活GCs并诱导快速的GCs尖峰反应中断(<500ms,MEA记录),而在相同频率的钙成像中,观察到细胞内钙水平升高。
我们的研究阐明了刺激依赖性GCs尖峰反应中断所涉及的机制:持续的高频刺激诱导尖峰中断,同时细胞内钙水平在升高时电钳制在较高水平。这些发现将指导未来优化用于神经元接口的电植入应用刺激模式的研究。