Hu Lian, Yang Ziqiang, Fang Yuan, Li Qingfeng, Miao Yixuan, Lu Xiaofeng, Sun Xuechun, Zhang Yaxin
School of Electronic Science and Engineering (National Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu 610054, China.
Huzhou Key Laboratory of Terahertz Integrated Circuits and Systems, Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China.
Micromachines (Basel). 2023 Oct 10;14(10):1921. doi: 10.3390/mi14101921.
This paper proposes a low-noise amplifier (LNA) for terahertz communication systems. The amplifier is designed based on 90 nm InP high-electron-mobility transistor (HEMT) technology. In order to achieve high gain of LNA, the proposed amplifier adopts a five-stage amplification structure. At the same time, the use of staggered tuning technology has achieved a large bandwidth of terahertz low-noise amplification. In addition, capacitors are used for interstage isolation, sector lines are used for RF bypass, and Microstrip is used to design matching circuits. The entire LNA circuit was validated using accurate electromagnetic simulation. The simulation results show that at 140 GHz, the small signal gain is 25 dB, the noise figure is 4.4 dB, the input 1 dB compression point is -19 dBm, and the 3 dB bandwidth reaches 60 GHz (110-170 GHz), which validates the effectiveness of the design.
本文提出了一种用于太赫兹通信系统的低噪声放大器（LNA）。该放大器基于90纳米磷化铟高电子迁移率晶体管（HEMT）技术设计。为了实现LNA的高增益，所提出的放大器采用了五级放大结构。同时，采用交错调谐技术实现了太赫兹低噪声放大的大带宽。此外，用电容进行级间隔离，用扇形线进行射频旁路，并用微带线设计匹配电路。整个LNA电路通过精确的电磁仿真进行了验证。仿真结果表明，在140吉赫兹时，小信号增益为25分贝，噪声系数为4.4分贝，输入1分贝压缩点为-19分贝毫瓦，3分贝带宽达到60吉赫兹（110-170吉赫兹），验证了设计的有效性。
