一款用于下一代沉浸式显示器的316MP、120FPS、高动态范围CMOS图像传感器。

A 316MP, 120FPS, High Dynamic Range CMOS Image Sensor for Next Generation Immersive Displays.

作者信息

Agarwal Abhinav, Hansrani Jatin, Bagwell Sam, Rytov Oleksandr, Shah Varun, Ong Kai Ling, Blerkom Daniel Van, Bergey Jonathan, Kumar Neil, Lu Tim, DaSilva Deanan, Graae Michael, Dibble David

机构信息

Forza Silicon (AMETEK Inc.), Pasadena, CA 91107, USA.

Sphere Entertainment Co., New York, NY 10121, USA.

出版信息

Sensors (Basel). 2023 Oct 11;23(20):8383. doi: 10.3390/s23208383.

DOI:10.3390/s23208383

PMID:37896477

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10611274/

Abstract

We present a 2D-stitched, 316MP, 120FPS, high dynamic range CMOS image sensor with 92 CML output ports operating at a cumulative date rate of 515 Gbit/s. The total die size is 9.92 cm × 8.31 cm and the chip is fabricated in a 65 nm, 4 metal BSI process with an overall power consumption of 23 W. A 4.3 µm dual-gain pixel has a high and low conversion gain full well of 6600e- and 41,000e-, respectively, with a total high gain temporal noise of 1.8e- achieving a composite dynamic range of 87 dB.

摘要

我们展示了一款二维拼接、316兆像素、120帧每秒、高动态范围的CMOS图像传感器，它具有92个CML输出端口，累积数据速率为515吉比特/秒。芯片总面积为9.92厘米×8.31厘米，采用65纳米、4层金属背照式工艺制造，总功耗为23瓦。一个4.3微米的双增益像素，其高转换增益和低转换增益下的满阱分别为6600电子和41000电子，高增益时的总时间噪声为1.8电子，实现了87分贝的复合动态范围。