Kong Mengqin, Osvet Andres, Barabash Anastasia, Zhang Kaicheng, Hu Huiying, Elia Jack, Erban Christof, Yokosawa Tadahiro, Spiecker Erdmann, Batentschuk Miroslaw, Brabec Christoph J
Institute of Materials for Electronics and Energy Technology (i-MEET), Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, Martensstrasse 7, Erlangen 91058, Germany.
Head of Research & Development, Sunovation Produktion GmbH, Glanzstoffstraße 21, 63820 Elsenfeld I, Germany.
ACS Appl Mater Interfaces. 2023 Oct 31. doi: 10.1021/acsami.3c11140.
Colloidal AgInS/ZnS quantum dots (QDs) have recently emerged as a promising, efficient, nontoxic, down-shifting material in optoelectronic devices. These QDs exhibit a high photoluminescent quantum yield and offer a range of potential applications, specifically in the field of photovoltaics (PVs) for light management. In this work, we report an eco-friendly method to synthesize AgInS/ZnS QDs and deposit them on commercial silicon solar cells (with an active area of 7.5 cm), with which the short-circuit current () enhanced by 1.44% and hence the power conversion efficiency by 2.51%. The enhancements in PV performance are mainly attributable to the improved external quantum efficiency in the ultraviolet region and reduced surface reflectance in the ultraviolet and near-infrared regions. We study the effect of QD concentration on the bifunctions of downshifting and antireflection. The optimal 15 mg/mL QDs blade-coated onto the Si solar cells realize maximum current generation as the reflectance loss in the visible wavelength is compensated by the minimized reflection in the near-infrared region.
胶体AgInS/ZnS量子点（QDs）最近已成为光电器件中一种有前景的、高效的、无毒的降频转换材料。这些量子点具有高光致发光量子产率，并提供了一系列潜在应用，特别是在用于光管理的光伏（PVs）领域。在这项工作中，我们报告了一种生态友好的方法来合成AgInS/ZnS量子点，并将它们沉积在商业硅太阳能电池（有效面积为7.5平方厘米）上，由此短路电流（）提高了1.44%，功率转换效率提高了2.51%。光伏性能的提高主要归因于紫外区域外部量子效率的提高以及紫外和近红外区域表面反射率的降低。我们研究了量子点浓度对降频转换和抗反射双功能的影响。当涂覆在硅太阳能电池上的最佳15毫克/毫升量子点通过近红外区域最小化反射补偿了可见波长的反射损失时，实现了最大电流产生。
