Shin Hwijong, Liu Seosi, Kwon Ohmyoung
School of Mechanical Engineering, Korea University Seoul 136-701 South Korea
RSC Adv. 2023 Nov 23;13(48):34230-34238. doi: 10.1039/d3ra06062d. eCollection 2023 Nov 16.
Electrical energy that is not converted into light in light emitting diodes (LEDs) is locally dissipated as heat in the active layers. Therefore, by measuring the temperature distribution with nanoscale resolution across the multi-quantum well (MQW) of an LED in operation, the effect of nanostructures inside the LED on the local energy conversion efficiency can be observed. In this study, we first demonstrated that vacuum null-point scanning thermal microscopy (VNP SThM) could be used to quantitatively map the two-dimensional temperature distribution across the MQW of an LED in operation with a sufficient signal-to-noise ratio. Subsequently, by increasing the injection current in four steps, we quantitatively mapped the temperature distribution across the MQW at each step and observed the shift in the temperature peak across the active layers due to the increase in injection current. The measurements of the temperature distribution around the MQW indicate that as the injection current increased, the overall temperature around the MQW increased significantly, and the temperature peak position shifted. These results show that the main cause of the dissipation of electrical energy into thermal energy inside an LED changes as the injection current increases, and the nanostructures inside an LED affect the dissipation of electrical energy into thermal energy. The high thermal sensitivity, nanoscale resolution, and convenience of VNP SThM may enable the direct observation of the effect of the nanostructures inside various types of nanophotonic devices on local energy conversion even under intense localized radiation.
发光二极管(LED)中未转化为光的电能在有源层中以热量的形式局部耗散。因此,通过以纳米级分辨率测量工作中LED的多量子阱(MQW)上的温度分布,可以观察到LED内部纳米结构对局部能量转换效率的影响。在本研究中,我们首先证明了真空零点扫描热显微镜(VNP SThM)可用于以足够的信噪比定量绘制工作中LED的MQW上的二维温度分布。随后,通过分四步增加注入电流,我们定量绘制了每一步MQW上的温度分布,并观察到由于注入电流增加导致有源层上温度峰值的移动。MQW周围温度分布的测量表明,随着注入电流增加,MQW周围的整体温度显著升高,且温度峰值位置发生移动。这些结果表明,随着注入电流增加,LED内部电能耗散为热能的主要原因发生变化,且LED内部的纳米结构影响电能向热能的耗散。VNP SThM的高热敏性、纳米级分辨率和便利性,甚至在强局部辐射下,也可能使直接观察各种类型纳米光子器件内部纳米结构对局部能量转换的影响成为可能。