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利用真空零位扫描热显微镜对工作中的发光二极管多量子阱进行定量纳米级温度测绘,以评估局部能量转换效率。

Quantitative nanoscale temperature mapping across the multi-quantum well of a light-emitting diode in operation using vacuum null-point scanning thermal microscopy to evaluate local energy conversion efficiency.

作者信息

Shin Hwijong, Liu Seosi, Kwon Ohmyoung

机构信息

School of Mechanical Engineering, Korea University Seoul 136-701 South Korea

出版信息

RSC Adv. 2023 Nov 23;13(48):34230-34238. doi: 10.1039/d3ra06062d. eCollection 2023 Nov 16.

DOI:10.1039/d3ra06062d
PMID:38019987
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10667591/
Abstract

Electrical energy that is not converted into light in light emitting diodes (LEDs) is locally dissipated as heat in the active layers. Therefore, by measuring the temperature distribution with nanoscale resolution across the multi-quantum well (MQW) of an LED in operation, the effect of nanostructures inside the LED on the local energy conversion efficiency can be observed. In this study, we first demonstrated that vacuum null-point scanning thermal microscopy (VNP SThM) could be used to quantitatively map the two-dimensional temperature distribution across the MQW of an LED in operation with a sufficient signal-to-noise ratio. Subsequently, by increasing the injection current in four steps, we quantitatively mapped the temperature distribution across the MQW at each step and observed the shift in the temperature peak across the active layers due to the increase in injection current. The measurements of the temperature distribution around the MQW indicate that as the injection current increased, the overall temperature around the MQW increased significantly, and the temperature peak position shifted. These results show that the main cause of the dissipation of electrical energy into thermal energy inside an LED changes as the injection current increases, and the nanostructures inside an LED affect the dissipation of electrical energy into thermal energy. The high thermal sensitivity, nanoscale resolution, and convenience of VNP SThM may enable the direct observation of the effect of the nanostructures inside various types of nanophotonic devices on local energy conversion even under intense localized radiation.

摘要

发光二极管(LED)中未转化为光的电能在有源层中以热量的形式局部耗散。因此,通过以纳米级分辨率测量工作中LED的多量子阱(MQW)上的温度分布,可以观察到LED内部纳米结构对局部能量转换效率的影响。在本研究中,我们首先证明了真空零点扫描热显微镜(VNP SThM)可用于以足够的信噪比定量绘制工作中LED的MQW上的二维温度分布。随后,通过分四步增加注入电流,我们定量绘制了每一步MQW上的温度分布,并观察到由于注入电流增加导致有源层上温度峰值的移动。MQW周围温度分布的测量表明,随着注入电流增加,MQW周围的整体温度显著升高,且温度峰值位置发生移动。这些结果表明,随着注入电流增加,LED内部电能耗散为热能的主要原因发生变化,且LED内部的纳米结构影响电能向热能的耗散。VNP SThM的高热敏性、纳米级分辨率和便利性,甚至在强局部辐射下,也可能使直接观察各种类型纳米光子器件内部纳米结构对局部能量转换的影响成为可能。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/209e/10667591/f631f4838444/d3ra06062d-f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/209e/10667591/227aa3273ceb/d3ra06062d-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/209e/10667591/4b27cbc495f3/d3ra06062d-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/209e/10667591/0dc62f63db30/d3ra06062d-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/209e/10667591/ffd39529ec49/d3ra06062d-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/209e/10667591/379b21d1f089/d3ra06062d-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/209e/10667591/f631f4838444/d3ra06062d-f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/209e/10667591/227aa3273ceb/d3ra06062d-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/209e/10667591/4b27cbc495f3/d3ra06062d-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/209e/10667591/0dc62f63db30/d3ra06062d-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/209e/10667591/ffd39529ec49/d3ra06062d-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/209e/10667591/379b21d1f089/d3ra06062d-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/209e/10667591/f631f4838444/d3ra06062d-f6.jpg

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本文引用的文献

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Nanomaterials (Basel). 2021 May 30;11(6):1449. doi: 10.3390/nano11061449.
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Efficiency Models for GaN-Based Light-Emitting Diodes: Status and Challenges.基于氮化镓的发光二极管效率模型:现状与挑战
Materials (Basel). 2020 Nov 17;13(22):5174. doi: 10.3390/ma13225174.
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Mini-LED, Micro-LED and OLED displays: present status and future perspectives.Mini-LED、Micro-LED和OLED显示器:现状与未来展望。
Light Sci Appl. 2020 Jun 18;9:105. doi: 10.1038/s41377-020-0341-9. eCollection 2020.
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A Review on Experimental Measurements for Understanding Efficiency Droop in InGaN-Based Light-Emitting Diodes.关于用于理解基于氮化铟镓的发光二极管效率下降的实验测量的综述
Materials (Basel). 2017 Oct 26;10(11):1233. doi: 10.3390/ma10111233.
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Fabrication of scanning thermal microscope probe with ultra-thin oxide tip and demonstration of its enhanced performance.具有超薄氧化物尖端的扫描热显微镜探针的制备及其增强性能的演示。
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