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在低能量剂量下，高分辨率极紫外光刻胶可使用高度羟基化的铪簇。

Highly hydroxylated hafnium clusters are accessible to high resolution EUV photoresists under small energy doses.

作者信息

Tseng Yu-Fang, Liao Pin-Chia, Chen Po-Hsiung, Gau Tsai-Sheng, Lin Burn-Jeng, Chiu Po-Wen, Liu Jui-Hsiung

机构信息

Department of Chemistry, National Tsing Hua University Hsinchu 30013 Taiwan

TSMC-NTHU Joint Research Center, National Tsing Hua University Hsinchu 30013 Taiwan.

出版信息

Nanoscale Adv. 2023 Nov 10;6(1):197-208. doi: 10.1039/d3na00508a. eCollection 2023 Dec 19.

DOI:10.1039/d3na00508a
PMID:38125600
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10729921/
Abstract

This work reports the success in accessing high-resolution negative-tone EUV photoresists without radical chain growth in the aggregation mechanism. The synthesis of a highly hydroxylated HfO(OH)(RCO) cluster 3 (R = -butyl or -Bu) is described; its EUV performance enables high resolution patterns HP = 18 nm under only 30 mJ cm. This photoresist also achieves high resolution patterns for e-beam lithography. Our new photoresist design to increase hydroxide substitutions of carboxylate ligands in the HfO(OH)(RCO) clusters improves the EUV resolution and also greatly reduces EUV doses. Mechanistic analysis indicates that EUV light not only enables photolytic decomposition of carboxylate ligands, but also enhances the Hf-OH dehydration. One additional advantage of cluster 3 is a very small loss of film thickness ( 13%) after the EUV pattern development.

摘要

这项工作报道了在聚集机制中无需自由基链增长就能获得高分辨率负性极紫外光刻胶的成功案例。文中描述了一种高度羟基化的HfO(OH)(RCO)簇3（R = -丁基或 -Bu）的合成；其极紫外性能在仅30 mJ/cm²的条件下就能实现18 nm的高分辨率图案。这种光刻胶在电子束光刻中也能实现高分辨率图案。我们通过增加HfO(OH)(RCO)簇中羧酸配体的羟基取代来设计新型光刻胶，这提高了极紫外分辨率，同时也大大降低了极紫外剂量。机理分析表明，极紫外光不仅能使羧酸配体发生光解，还能增强Hf-OH脱水反应。簇3 的另一个优点是在极紫外图案显影后膜厚损失非常小（13%）。

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