Lim Gayoung, Lee Kangsik, Koh Chawon, Nishi Tsunehiro, Yoon Hyo Jae
Department of Chemistry, Korea University, Seoul 02841, Republic of Korea.
Semiconductor R&D Center, Samsung Electronics Co., Ltd, Gyeonggi-do 18448, Republic of Korea.
ACS Mater Au. 2024 Mar 27;4(5):468-478. doi: 10.1021/acsmaterialsau.4c00010. eCollection 2024 Sep 11.
We report a new photoresist based on a multinuclear tin-based macrocyclic complex and its performance for extreme UV (EUV) photolithography. The new photoresist has a trinuclear macrocyclic structure containing three salicylhydroxamic acid ligands and six Sn-CH bonds, which was confirmed by multinuclear nuclear magnetic resonance (NMR) and FT-IR spectroscopies and single-crystal X-ray diffraction study. The resist exhibited good humidity, air, and thermal stabilities, while showing good photochemical reactivity. Photochemical cross-linking of the resist was confirmed by X-ray photoelectron and solid-state NMR spectroscopic analyses. EUV photolithography with the 44 nm-thick film on a silicon wafer revealed a line-edge-roughness (LER) of 1.1 nm in a 20 nm half-pitch pattern. The -factor, a metric that gauges the performance of photoresists by considering the tradeoff between resolution, LER, and sensitivity (RLS), was estimated to be 1.28 × 10 mJ·nm, indicating its great performance compared to the EUV photoresists reported in the literature.
我们报道了一种基于多核锡基大环配合物的新型光刻胶及其在极紫外（EUV）光刻中的性能。这种新型光刻胶具有包含三个水杨羟肟酸配体和六个Sn-CH键的三核大环结构，这通过多核核磁共振（NMR）、傅里叶变换红外光谱（FT-IR）以及单晶X射线衍射研究得以证实。该光刻胶表现出良好的湿度、空气和热稳定性，同时具有良好的光化学反应活性。通过X射线光电子能谱和固态NMR光谱分析证实了光刻胶的光化学交联。在硅片上使用44 nm厚的薄膜进行EUV光刻，在20 nm半间距图案中显示出线边缘粗糙度（LER）为1.1 nm。考虑到分辨率、LER和灵敏度（RLS）之间的权衡来衡量光刻胶性能的因子估计为1.28×10 mJ·nm，表明与文献中报道的EUV光刻胶相比，其性能优异。
