Liu Xionghua, Zhang Dong, Deng Yongcheng, Jiang Nai, Zhang Enze, Shen Chao, Chang Kai, Wang Kaiyou
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
ACS Nano. 2024 Jan 9;18(1):1013-1021. doi: 10.1021/acsnano.3c10187. Epub 2023 Dec 26.
Kagome antiferromagnetic semimetals such as MnSn have attracted extensive attention for their potential application in antiferromagnetic spintronics. Realizing high manipulation of kagome antiferromagnetic spin states at room temperature can reveal rich emergent phenomena resulting from the quantum interactions between topology, spin, and correlation. Here, we achieved tunable spin textures of MnSn through symmetry design by controlling alternate MnSn and heavy-metal Pt thicknesses. The various topological spin textures were predicted with theoretical simulations, and the skyrmion-induced topological Hall effect, strong spin-dependent scattering, and vertical gradient of spin states were obtained by magnetotransport and magnetic circular dichroism (MCD) spectroscopy measurements in MnSn/Pt heterostructures. Our work provides an effective strategy for the innovative design of topological antiferromagnetic spintronic devices.
诸如MnSn之类的 Kagome反铁磁半金属因其在反铁磁自旋电子学中的潜在应用而备受关注。在室温下实现对Kagome反铁磁自旋态的高度操控，可以揭示出由拓扑、自旋和关联之间的量子相互作用所产生的丰富涌现现象。在此，我们通过控制交替的MnSn和重金属Pt的厚度，通过对称性设计实现了MnSn的可调自旋纹理。利用理论模拟预测了各种拓扑自旋纹理，并通过对MnSn/Pt异质结构进行磁输运和磁圆二色性（MCD）光谱测量，获得了由斯格明子诱导的拓扑霍尔效应、强自旋相关散射以及自旋态的垂直梯度。我们的工作为拓扑反铁磁自旋电子器件的创新设计提供了一种有效策略。
