Suppr超能文献

反铁磁层间交换耦合的CoB/Ir/Pt多层膜。

Antiferromagnetic interlayer exchange coupled CoB/Ir/Pt multilayers.

作者信息

Darwin Emily, Tomasello Riccardo, Shepley Philippa M, Satchell Nathan, Carpentieri Mario, Finocchio Giovanni, Hickey B J

机构信息

School of Physics and Astronomy, University of Leeds, Leeds, LS2 9JT, UK.

Department of Electrical and Information Engineering, Politecnico Di Bari, Via E. Orabona 4, 70125, Bari, Italy.

出版信息

Sci Rep. 2024 Jan 2;14(1):95. doi: 10.1038/s41598-023-49976-4.

Abstract

Synthetic antiferromagnetic structures can exhibit the advantages of high velocity similarly to antiferromagnets with the additional benefit of being imaged and read-out through techniques applied to ferromagnets. Here, we explore the potential and limits of synthetic antiferromagnets to uncover ways to harness their valuable properties for applications. Two synthetic antiferromagnetic systems have been engineered and systematically investigated to provide an informed basis for creating devices with maximum potential for data storage, logic devices, and skyrmion racetrack memories. The two systems considered are (system 1) CoB/Ir/Pt of N repetitions with Ir inducing the negative coupling between the ferromagnetic layers and (system 2) two ferromagnetically coupled multilayers of CoB/Ir/Pt, coupled together antiferromagnetically with an Ir layer. From the hysteresis, it is found that system 1 shows stable antiferromagnetic interlayer exchange coupling between each magnetic layer up to N = 7. Using Kerr imaging, the two ferromagnetic multilayers in system 2 are shown to undergo separate maze-like switches during hysteresis. Both systems are also studied as a function of temperature and show different behaviors. Micromagnetic simulations predict that in both systems the skyrmion Hall angle is suppressed with the skyrmion velocity five times higher in system 1 than system 2.

摘要

合成反铁磁结构可以展现出与反铁磁体相似的高速优势,并且还具有通过应用于铁磁体的技术进行成像和读取的额外好处。在这里,我们探索合成反铁磁体的潜力和局限性,以找出利用其宝贵特性用于应用的方法。已经设计并系统研究了两种合成反铁磁系统,为创建具有最大数据存储潜力的器件、逻辑器件和斯格明子赛道存储器提供了明智的基础。所考虑的两个系统是:(系统1)具有N次重复的CoB/Ir/Pt,其中Ir诱导铁磁层之间的负耦合;(系统2)两个铁磁耦合的CoB/Ir/Pt多层膜,通过一个Ir层反铁磁耦合在一起。从磁滞现象发现,系统1在N = 7之前,每个磁层之间都表现出稳定的反铁磁层间交换耦合。使用克尔成像技术,系统2中的两个铁磁多层膜在磁滞过程中表现出单独的迷宫状开关。还研究了这两个系统随温度的变化,它们表现出不同的行为。微磁模拟预测,在这两个系统中,斯格明子霍尔角都受到抑制,系统1中的斯格明子速度比系统2高五倍。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f391/10761723/1589c4f9f220/41598_2023_49976_Fig1_HTML.jpg

文献AI研究员

20分钟写一篇综述,助力文献阅读效率提升50倍。

立即体验

用中文搜PubMed

大模型驱动的PubMed中文搜索引擎

马上搜索

文档翻译

学术文献翻译模型,支持多种主流文档格式。

立即体验