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用于有序拓扑缺陷的机械操纵。

Mechanical manipulation for ordered topological defects.

作者信息

Gao Ziyan, Zhang Yixuan, Li Xiaomei, Zhang Xiangping, Chen Xue, Du Guoshuai, Hou Fei, Gu Baijun, Lun Yingzhuo, Zhao Yao, Zhao Yingtao, Qu Zhaoliang, Jin Ke, Wang Xiaolei, Chen Yabin, Liu Zhanwei, Huang Houbing, Gao Peng, Mostovoy Maxim, Hong Jiawang, Cheong Sang-Wook, Wang Xueyun

机构信息

School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China.

Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China.

出版信息

Sci Adv. 2024 Jan 5;10(1):eadi5894. doi: 10.1126/sciadv.adi5894. Epub 2024 Jan 3.

Abstract

Randomly distributed topological defects created during the spontaneous symmetry breaking are the fingerprints to trace the evolution of symmetry, range of interaction, and order parameters in condensed matter systems. However, the effective mean to manipulate topological defects into ordered form is elusive due to the topological protection. Here, we establish a strategy to effectively align the topological domain networks in hexagonal manganites through a mechanical approach. It is found that the nanoindentation strain gives rise to a threefold Magnus-type force distribution, leading to a sixfold symmetric domain pattern by driving the vortex and antivortex in opposite directions. On the basis of this rationale, sizeable mono-chirality topological stripe is readily achieved by expanding the nanoindentation to scratch, directly transferring the randomly distributed topological defects into an ordered form. This discovery provides a mechanical strategy to manipulate topological protected domains not only on ferroelectrics but also on ferromagnets/antiferromagnets and ferroelastics.

摘要

在自发对称性破缺过程中产生的随机分布拓扑缺陷是追踪凝聚态物质系统中对称性演化、相互作用范围和序参量的印记。然而,由于拓扑保护,将拓扑缺陷操纵成有序形式的有效方法仍然难以捉摸。在此,我们建立了一种通过机械方法有效排列六方锰氧化物中拓扑畴网络的策略。研究发现,纳米压痕应变会产生三重马格努斯型力分布,通过沿相反方向驱动涡旋和反涡旋,导致六重对称畴图案。基于这一原理,通过将纳米压痕扩展为划痕,可轻松实现相当大的单手性拓扑条纹,将随机分布的拓扑缺陷直接转化为有序形式。这一发现提供了一种机械策略,不仅可用于操纵铁电体上的拓扑保护畴,还可用于铁磁体/反铁磁体和铁弹性体上的拓扑保护畴。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6e1c/10796077/f38a74159220/sciadv.adi5894-f1.jpg

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