Hou Shaoqi, Gao Xiaochun, Lv Xingyue, Zhao Yilin, Yin Xitao, Liu Ying, Fang Juan, Yu Xingxing, Ma Xiaoguang, Ma Tianyi, Su Dawei
School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney (UTS), Sydney, NSW, 2007, Australia.
Laboratory of Plasma and Energy Conversion, School of Physics and Optoelectronic Engineering, Ludong University, 186 Middle Hongqi Road, Yantai, 264025, People's Republic of China.
Nanomicro Lett. 2024 Jan 4;16(1):70. doi: 10.1007/s40820-023-01297-x.
Over the past decade, graphitic carbon nitride (g-CN) has emerged as a universal photocatalyst toward various sustainable carbo-neutral technologies. Despite solar applications discrepancy, g-CN is still confronted with a general fatal issue of insufficient supply of thermodynamically active photocarriers due to its inferior solar harvesting ability and sluggish charge transfer dynamics. Fortunately, this could be significantly alleviated by the "all-in-one" defect engineering strategy, which enables a simultaneous amelioration of both textural uniqueness and intrinsic electronic band structures. To this end, we have summarized an unprecedently comprehensive discussion on defect controls including the vacancy/non-metallic dopant creation with optimized electronic band structure and electronic density, metallic doping with ultra-active coordinated environment (M-N, M-CN, M-O bonding), functional group grafting with optimized band structure, and promoted crystallinity with extended conjugation π system with weakened interlayered van der Waals interaction. Among them, the defect states induced by various defect types such as N vacancy, P/S/halogen dopants, and cyano group in boosting solar harvesting and accelerating photocarrier transfer have also been emphasized. More importantly, the shallow defect traps identified by femtosecond transient absorption spectra (fs-TAS) have also been highlighted. It is believed that this review would pave the way for future readers with a unique insight into a more precise defective g-CN "customization", motivating more profound thinking and flourishing research outputs on g-CN-based photocatalysis.
在过去十年中,石墨相氮化碳(g-CN)已成为一种适用于各种可持续碳中性技术的通用光催化剂。尽管在太阳能应用方面存在差异,但由于其较差的太阳能捕获能力和缓慢的电荷转移动力学,g-CN仍然面临着一个普遍的致命问题,即热力学活性光载流子供应不足。幸运的是,通过“一体化”缺陷工程策略可以显著缓解这一问题,该策略能够同时改善结构独特性和本征电子能带结构。为此,我们总结了关于缺陷控制的前所未有的全面讨论,包括通过优化电子能带结构和电子密度来产生空位/非金属掺杂剂、具有超活性配位环境的金属掺杂(M-N、M-CN、M-O键合)、通过优化能带结构进行官能团接枝,以及通过扩展共轭π体系和减弱层间范德华相互作用来提高结晶度。其中,还强调了由各种缺陷类型(如N空位、P/S/卤素掺杂剂和氰基)诱导的缺陷态在增强太阳能捕获和加速光载流子转移方面的作用。更重要的是,还突出了通过飞秒瞬态吸收光谱(fs-TAS)确定的浅缺陷陷阱。相信这篇综述将为未来的读者提供独特的见解,以便更精确地“定制”有缺陷的g-CN,激发对基于g-CN的光催化更深入的思考并产生丰硕的研究成果。