Si Mengwei, Zhang Zhuocheng, Chang Sou-Chi, Haratipour Nazila, Zheng Dongqi, Li Junkang, Avci Uygar E, Ye Peide D
School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States.
Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States.
ACS Nano. 2021 Mar 23;15(3):5689-5695. doi: 10.1021/acsnano.1c00968. Epub 2021 Mar 2.
A ferroelectric semiconductor junction is a promising two-terminal ferroelectric device for nonvolatile memory and neuromorphic computing applications. In this work, we propose and report the experimental demonstration of asymmetric metal/α-InSe/Si crossbar ferroelectric semiconductor junctions (c-FSJs). The depletion in doped Si is used to enhance the modulation of the effective Schottky barrier height through the ferroelectric polarization. A high-performance α-InSe c-FSJ is achieved with a high on/off ratio > 10 at room temperature, on/off ratio > 10 at an elevated temperature of 140 °C, retention > 10 s, and endurance > 10 cycles. The on/off ratio of the α-InSe asymmetric FSJs can be further enhanced to >10 by introducing a metal/α-InSe/insulator/metal structure.
铁电半导体结是一种很有前途的用于非易失性存储器和神经形态计算应用的两端铁电器件。在这项工作中，我们提出并报告了非对称金属/α-InSe/Si交叉棒铁电半导体结（c-FSJ）的实验演示。掺杂硅中的耗尽用于通过铁电极化增强有效肖特基势垒高度的调制。在室温下实现了具有高开/关比>10、在140°C的高温下开/关比>10、保持时间>10秒和耐久性>10次循环的高性能α-InSe c-FSJ。通过引入金属/α-InSe/绝缘体/金属结构，α-InSe非对称FSJ的开/关比可以进一步提高到>10。
