栅极功函数和电极间隙对宽带隙掺锡α-GaO金属-半导体场效应晶体管的影响

The Effect of Gate Work Function and Electrode Gap on Wide Band-Gap Sn-Doped α-GaO Metal-Semiconductor Field-Effect Transistors.

作者信息

Ro Han-Sol, Kang Sung Ho, Jung Sungyeop

机构信息

Semiconductor Devices and Circuits Laboratory, Advanced Institute of Convergence Technology, Seoul National University, Suwon 16229, Korea.

Research Center for Materials, Components and Equipment, Advanced Institute of Convergence Technology, Seoul National University, Suwon 16229, Korea.

出版信息

Materials (Basel). 2022 Jan 25;15(3):913. doi: 10.3390/ma15030913.

DOI:10.3390/ma15030913

PMID:35160858

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8838554/

Abstract

We present technology computer aided design (TCAD) results for wide band-gap Sn-doped α-GaO metal-semiconductor field-effect transistors (MESFETs). In particular, the effect of gate work function and electrode gap length on the electrical characteristics is demonstrated for a thorough understanding of the behavior of such devices. The gate work function significantly affects the reverse bias drain current under the gate-current dominant regime, whereas a gate-source/drain gap larger than 0.1 µm has a negligible effect on the drain current.

摘要

我们展示了宽带隙掺锡α-GaO金属半导体场效应晶体管（MESFET）的技术计算机辅助设计（TCAD）结果。特别是，展示了栅极功函数和电极间隙长度对电学特性的影响，以便全面了解此类器件的行为。在栅极电流主导区域，栅极功函数对反向偏置漏极电流有显著影响，而大于0.1 µm的栅源/漏极间隙对漏极电流的影响可忽略不计。