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基于负反馈补偿读出电路的宽带磁电传感器。

A Wide-Band Magnetoelectric Sensor Based on a Negative-Feedback Compensated Readout Circuit.

作者信息

Qiu Yang, Shi Lingshan, Chen Longyu, Yu Yuxuan, Yu Guoliang, Zhu Mingmin, Zhou Haomiao

机构信息

The Key Laboratory of Electromagnetic Wave Information Technology and Metrology of Zhejiang Province, College of Information Engineering, China Jiliang University, Hangzhou 310018, China.

出版信息

Sensors (Basel). 2024 Jan 10;24(2):423. doi: 10.3390/s24020423.

DOI:10.3390/s24020423
PMID:38257514
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10820417/
Abstract

Magnetoelectric (ME) sensors cannot effectively detect broadband magnetic field signals due to their narrow bandwidth, and existing readout circuits are unable to vary the bandwidth of the sensors. To expand the bandwidth, this paper introduces a negative-feedback readout circuit, fabricated by introducing a negative-feedback compensation circuit based on the direct readout circuit of the ME sensor. The negative-feedback compensation circuit contains a current amplifier, a feedback resistor, and a feedback coil. For this purpose, a Metglas/PVDF/Metglas ME sensor was prepared. Experimental measurements show that there is a six-fold difference between the maximum and minimum values of the ME voltage coefficients in the 6-39 kHz frequency band for the ME sensor without the negative-feedback compensation circuit when the sensor operates at the optimal bias magnetic field. However, the ME voltage coefficient in this band remains stable, at 900 V/T, after the charge amplification of the direct-reading circuit and the negative-feedback circuit. In addition, experimental results show that this negative-feedback readout circuit does not increase the equivalent magnetic noise of the sensor, with a noise level of 240 pT/√Hz in the frequency band lower than 25 kHz, 63 pT/√Hz around the resonance frequency of 30 kHz, and 620 pT/√Hz at 39 kHz. This paper proposes a negative-feedback readout circuit based on the direct readout circuit, which greatly increases the bandwidth of ME sensors and promotes the widespread application of ME sensors in the fields of broadband weak magnetic signal detection and DBS electrode positioning.

摘要

磁电（ME）传感器由于带宽较窄，无法有效检测宽带磁场信号，且现有的读出电路无法改变传感器的带宽。为了扩展带宽，本文介绍了一种负反馈读出电路，它是在ME传感器直接读出电路的基础上引入负反馈补偿电路制成的。负反馈补偿电路包含一个电流放大器、一个反馈电阻和一个反馈线圈。为此，制备了一种Metglas/PVDF/Metglas ME传感器。实验测量表明，在最佳偏置磁场下工作时，对于没有负反馈补偿电路的ME传感器，在6 - 39 kHz频带内ME电压系数的最大值和最小值之间相差六倍。然而，经过直接读出电路和负反馈电路的电荷放大后，该频带内的ME电压系数保持稳定，为900 V/T。此外，实验结果表明，这种负反馈读出电路不会增加传感器的等效磁噪声，在低于25 kHz的频带内噪声水平为240 pT/√Hz，在30 kHz共振频率附近为63 pT/√Hz，在39 kHz时为620 pT/√Hz。本文提出了一种基于直接读出电路的负反馈读出电路，极大地增加了ME传感器的带宽，促进了ME传感器在宽带弱磁信号检测和深部脑刺激（DBS）电极定位等领域的广泛应用。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d111/10820417/a1c0fbe04905/sensors-24-00423-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d111/10820417/ca68b1ca7ea4/sensors-24-00423-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d111/10820417/a7ca1aa47485/sensors-24-00423-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d111/10820417/e956c73668fe/sensors-24-00423-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d111/10820417/3396321364ef/sensors-24-00423-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d111/10820417/e5f425d8217a/sensors-24-00423-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d111/10820417/a1c0fbe04905/sensors-24-00423-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d111/10820417/ca68b1ca7ea4/sensors-24-00423-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d111/10820417/a7ca1aa47485/sensors-24-00423-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d111/10820417/e956c73668fe/sensors-24-00423-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d111/10820417/3396321364ef/sensors-24-00423-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d111/10820417/e5f425d8217a/sensors-24-00423-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d111/10820417/a1c0fbe04905/sensors-24-00423-g006.jpg

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