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一种基于自旋阀的菱形微物体,实现全惠斯通电桥。

A Spin Valve-Based Rhombus-Shaped Micro-Object Implementing a Full Wheatstone Bridge.

作者信息

Milyaev Mikhail, Naumova Larisa, Germizina Anastasiya, Chernyshova Tatyana, Pavlova Anastasia, Krinitsina Tatiana, Proglyado Vyacheslav, Ustinov Vladimir

机构信息

M.N. Mikheev lnstitute of Metal Physics, Ural Branch, Russian Academy of Sciences, S. Kovalevskoi Street 18, Ekaterinburg 620990, Russia.

出版信息

Sensors (Basel). 2024 Jan 18;24(2):625. doi: 10.3390/s24020625.

Abstract

Spin valves with a synthetic antiferromagnet were fabricated via magnetron sputtering. It was shown that the fabricated spin valve layers had a perfect microstructure and smooth interfaces, and therefore, an RKKY interaction dominated in the coupling of the ferromagnetic layers separated by a copper spacer. Rhombus-shaped micro-objects were fabricated from a single spin valve film. The thermomagnetic treatment procedure was found to form unidirectional anisotropy in the micro-object such that the values of the exchange bias fields in the rhombus' nonparallel sides were opposite in sign. For the CoFeNi/Ru/CoFeNi synthetic antiferromagnet, we determined the differences between the ferromagnetic layer thicknesses at which the thermomagnetic treatment formed the same exchange bias all over each rhombus' side. We also fabricated a sensor element in which each side of the rhombus was the shoulder of a Wheatstone bridge. After the thermomagnetic treatment procedure, each shoulder worked as an active magnetosensitive element, enabling the device to operate as a full Wheatstone bridge. The sensor output exhibited a step shape, high sensitivity to field changes, and significant magnetic hysteresis. Such characteristics are suitable for switching devices.

摘要

通过磁控溅射制备了具有合成反铁磁体的自旋阀。结果表明,制备的自旋阀层具有完美的微观结构和光滑的界面,因此,在由铜间隔层隔开的铁磁层耦合中,RKKY相互作用占主导。从单个自旋阀薄膜制备了菱形微物体。发现热磁处理程序在微物体中形成单向各向异性,使得菱形不平行边中的交换偏置场值符号相反。对于CoFeNi/Ru/CoFeNi合成反铁磁体,我们确定了热磁处理在每个菱形边形成相同交换偏置时铁磁层厚度的差异。我们还制造了一个传感器元件,其中菱形的每一边都是惠斯通电桥的臂。经过热磁处理程序后,每个臂都作为一个有源磁敏元件,使该器件能够作为一个完整的惠斯通电桥工作。传感器输出呈现阶跃形状,对场变化具有高灵敏度,并且具有明显的磁滞现象。这些特性适用于开关器件。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1e38/10819318/2228164a2b9c/sensors-24-00625-g001.jpg

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