Zhang Mingcong, Liu Yunjie, Guo Fuhai, Zhang Bo, Hu Bing, Li Siqi, Yu Weizhuo, Hao Lanzhong
School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, P. R. China.
ACS Appl Mater Interfaces. 2024 Feb 7;16(5):6152-6161. doi: 10.1021/acsami.3c17933. Epub 2024 Jan 25.
Mid- and far-infrared photodetectors that can operate at room temperature are essential for both civil and military applications. However, the widespread use of mid-to-far-infrared photonic technology faces challenges due to the need for low-temperature cooling of existing commercial semiconductors and the limited optical absorption efficiency of two-dimensional materials. We have utilized the photothermoelectric effect to fabricate a self-powered, broadband, and high-performance photodetector based on a one-dimensional tellurium nanorod array film. The device surpasses energy band gap limitations, functioning even at wavelengths up to approximately 10,600 nm. In particular, the detectivity of the device can reach 4.8 × 10 Jones at 4060 nm under room-temperature conditions, which is an order of magnitude higher than that of commercially available photodetectors. It demonstrates fast response and recovery times of 8.3 and 8.8 ms. Furthermore, the device demonstrates outstanding flexibility withstanding over 300 bending cycles and environmental stability. These results suggest a viable approach for designing and developing high-performance, room-temperature, wearable optoelectronic devices.
能够在室温下工作的中红外和远红外光电探测器对民用和军事应用都至关重要。然而,由于现有商用半导体需要低温冷却以及二维材料的光吸收效率有限,中红外到远红外光子技术的广泛应用面临挑战。我们利用光热电效应,基于一维碲纳米棒阵列薄膜制造了一种自供电、宽带且高性能的光电探测器。该器件突破了能带隙限制,即使在波长高达约10600 nm时也能工作。特别是,在室温条件下,该器件在4060 nm处的探测率可达4.8×10琼斯,比市售光电探测器高一个数量级。它展示了8.3和8.8 ms的快速响应和恢复时间。此外,该器件表现出出色的柔韧性,可承受超过300次弯曲循环以及环境稳定性。这些结果为设计和开发高性能、室温、可穿戴光电器件提供了一种可行的方法。