Iqbal Zafar, Félix Roberto, Musiienko Artem, Thiesbrummel Jarla, Köbler Hans, Gutierrez-Partida Emilio, Gries Thomas W, Hüsam Elif, Saleh Ahmed, Wilks Regan G, Zhang Jiahuan, Stolterfoht Martin, Neher Dieter, Albrecht Steve, Bär Marcus, Abate Antonio, Wang Qiong
Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin, Germany.
Institute for Physics and Astronomy, University of Potsdam, Karl-Liebknecht-Straße 24-25, 14476 Potsdam-Golm, Germany.
J Am Chem Soc. 2024 Feb 21;146(7):4642-4651. doi: 10.1021/jacs.3c11711. Epub 2024 Feb 9.
Here, we report a detailed surface analysis of dry- and ambient air-annealed CsPbI films and their subsequent modified interfaces in perovskite solar cells. We revealed that annealing in ambient air does not adversely affect the optoelectronic properties of the semiconducting film; instead, ambient air-annealed samples undergo a surface modification, causing an enhancement of band bending, as determined by hard X-ray photoelectron spectroscopy measurements. We observe interface charge carrier dynamics changes, improving the charge carrier extraction in CsPbI perovskite solar cells. Optical spectroscopic measurements show that trap state density is decreased due to ambient air annealing. As a result, air-annealed CsPbI-based - structure devices achieved a 19.8% power conversion efficiency with a 1.23 V open circuit voltage.
在此,我们报告了对干退火和环境空气退火的CsPbI薄膜及其在钙钛矿太阳能电池中随后改性的界面进行的详细表面分析。我们发现,在环境空气中退火不会对半导体薄膜的光电性能产生不利影响;相反,通过硬X射线光电子能谱测量确定,环境空气退火的样品会发生表面改性,导致能带弯曲增强。我们观察到界面电荷载流子动力学发生变化,改善了CsPbI钙钛矿太阳能电池中的电荷载流子提取。光谱测量表明,由于环境空气退火,陷阱态密度降低。因此,基于空气退火的CsPbI结构器件实现了19.8%的功率转换效率和1.23 V的开路电压。