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提高基于铌酸锂的压电压力传感器的电荷输出。

Enhancing the electric charge output in LiNbO-based piezoelectric pressure sensors.

作者信息

Xu Wenhao, Geng Wenping, Zhang Huiyi, Fu Wenxiao, Wang Zihan, Li Jiahe, Qiao Xiaojun, Zhang Yichi, Chou Xiujian

机构信息

Science and Technology on Electronic Test and Measurement Laboratory, North University of China Taiyuan 030051 China

出版信息

RSC Adv. 2024 Mar 11;14(12):8313-8321. doi: 10.1039/d3ra07712h. eCollection 2024 Mar 6.

Abstract

Lithium niobate (LiNbO) single crystals are a kind of ferroelectric material with a high piezoelectric coefficient and Curie temperature, which is suitable for the preparation of piezoelectric pressure sensors. However, there is little research reporting on the use of LiNbO single crystals to prepare piezoelectric pressure sensors. Therefore, in this paper, LiNbO was used to prepare piezoelectric pressure sensors to study the feasibility of using LiNbO single crystals as a sensitive material for piezoelectric pressure sensors. In addition, chemical mechanical polishing (CMP) technology was used to prepare LiNbO crystals with different thicknesses to study the influence of these LiNbO crystals on the electric charge output of the sensors. The results showed that the sensitivity of a 300 μm sample (0.218 mV kPa) was about 1.23 times that of a 500 μm sample (0.160 mV kPa). Low-temperature polymer heterogeneous integration and oxygen plasma activation technologies were used to realize the heterogeneous integration of LiNbO and silicon to prepare piezoelectric pressure sensors, which could significantly improve the sensitivity of the sensor by approximately 16.06 times (2.569 mV kPa) that of the original sample (0.160 mV kPa) due to an appropriate residual stress that did not shatter LiNbO or silicon, thus providing a possible method for integrating piezoelectric pressure sensors and integrated circuits.

摘要

铌酸锂(LiNbO)单晶是一种具有高压电系数和居里温度的铁电材料,适用于制备压电压力传感器。然而,关于使用铌酸锂单晶制备压电压力传感器的研究报道较少。因此,本文采用铌酸锂制备压电压力传感器,以研究使用铌酸锂单晶作为压电压力传感器敏感材料的可行性。此外,利用化学机械抛光(CMP)技术制备了不同厚度的铌酸锂晶体,以研究这些铌酸锂晶体对传感器电荷输出的影响。结果表明,300μm样品(0.218mV kPa)的灵敏度约为500μm样品(0.160mV kPa)的1.23倍。采用低温聚合物异质集成和氧等离子体活化技术实现铌酸锂与硅的异质集成,制备压电压力传感器,由于适当的残余应力不会使铌酸锂或硅破碎,可使传感器灵敏度显著提高约16.06倍(2.569mV kPa),相对于原始样品(0.160mV kPa),从而为压电压力传感器与集成电路的集成提供了一种可能的方法。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d55f/10926947/b0dd8bb66f14/d3ra07712h-f1.jpg

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