Harfah Halimah, Wicaksono Yusuf, Sunnardianto Gagus Ketut, Majidi Muhammad Aziz, Kusakabe Koichi
Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-Cho, Toyonaka, Osaka 560-0043, Japan.
RIKEN Cluster for Pioneering Research (CPR), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan.
Phys Chem Chem Phys. 2024 Mar 20;26(12):9733-9740. doi: 10.1039/d4cp00218k.
We present a novel strategy to create a van der Waals-based magnetic tunnel junction (MTJ) comprising a three-atom layer of graphene (Gr) sandwiched with hexagonal boron nitride (hBN) layers by introducing a monoatomic boron vacancy in each hBN layer. The magnetic properties and electronic structure of the system were investigated using density functional theory (DFT) and the transmission probability of the MTJ was investigated using the Landauer-Büttiker formalism within the non-equilibrium Green function method. The Stoner gap was created between the spin-majority channel and the spin-minority channel on the local density of states of the hBN monoatomic boron-vacancy (V) near the Fermi energy, creating a possible control of the spin valve by considering two magnetic alignment of hBN(V) layers, anti-parallel configuration (APC) and parallel configuration (PC). The transmission probability calculation results showed a high electron transmission in the PC of the hBN(V) layers and a low transmission when the APC was considered. A high tunneling magnetoresistance (TMR) ratio of approximately 400% was observed when comparing the APC and PC of the hBN(V) layers in hBN(V)/Gr/hBN(V), giving the highest TMR ratio for the thinnest MTJ system.
我们提出了一种新颖的策略，通过在每个六方氮化硼（hBN）层中引入单原子硼空位，来创建一种基于范德华力的磁隧道结（MTJ），该结由夹在hBN层之间的三原子层石墨烯（Gr）组成。使用密度泛函理论（DFT）研究了该系统的磁性和电子结构，并在非平衡格林函数方法中使用朗道尔-比蒂克形式主义研究了MTJ的传输概率。在费米能量附近的hBN单原子硼空位（V）的局部态密度上，在自旋多数通道和自旋少数通道之间产生了斯托纳能隙，通过考虑hBN（V）层的两种磁排列，即反平行配置（APC）和平行配置（PC），实现了对自旋阀的可能控制。传输概率计算结果表明，hBN（V）层的PC中电子传输较高，而考虑APC时传输较低。当比较hBN（V）/Gr/hBN（V）中hBN（V）层的APC和PC时，观察到约400%的高隧穿磁电阻（TMR）比，这是最薄MTJ系统的最高TMR比。
