Correlative Nanoscale Imaging of Strained hBN Spin Defects.

Spin defects like the negatively charged boron vacancy color center (V) in hexagonal boron nitride (hBN) may enable new forms of quantum sensing with near-surface defects in layered van der Waals heterostructures. Here, the effect of strain on V color centers in hBN is revealed with correlative cathodoluminescence and photoluminescence microscopies. Strong localized enhancement and redshifting of the V luminescence is observed at creases, consistent with density functional theory calculations showing V migration toward regions with moderate uniaxial compressive strain. The ability to manipulate spin defects with highly localized strain is critical to the development of practical 2D quantum devices and quantum sensors.