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通过改变插入的AlGaN电子阻挡层的Al含量来控制基于GaN的激光二极管性能。

Controlling GaN-Based Laser Diode Performance by Variation of the Al Content of an Inserted AlGaN Electron Blocking Layer.

作者信息

Chen Yuhui, Jiang Daiyi, Zeng Chunmiao, Xu Chuanxiong, Sun Haoran, Hou Yufei, Zhou Mei

机构信息

Department of Applied Physics, China Agricultural University, Beijing 100083, China.

College of Science, China Agricultural University, Beijing 100083, China.

出版信息

Nanomaterials (Basel). 2024 Feb 29;14(5):449. doi: 10.3390/nano14050449.

DOI:10.3390/nano14050449
PMID:38470779
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10934606/
Abstract

The leakage of the electronic current of a laser diode (LD) has some significant influences on the performance of the LD. In this study, commercial simulation software LASTIP is used to numerically evaluate the performances of LDs by using different wavelengths and Al contents of the electron blocking layer (EBL). These LDs a adopt multilayer structure, which contains cladding layers, waveguide layers, multiple quantum well layers, contact layers and an AlGaN EBL. The influence mechanism of EBL is theoretically examined by analyzing the simulated performances. It is found that for short-wavelength violet LDs, the electrical and optical properties of the LD will reach the optimum state when the Al content (x) in the EBL is nearly 0.25. For long-wavelength green LDs, it will achieve optimum electrical and optical properties when the Al content in the EBL is as low as possible. We also compare the simulation results of LDs with emission wavelengths in the range of violet and green, including blue cyan, for a more general evaluation. According to the simulated results, it is verified that the influence of the EBL's Al content on LD performance enhances as the wavelength increases.

摘要

激光二极管(LD)的电子电流泄漏对其性能有一些重大影响。在本研究中,使用商业模拟软件LASTIP通过改变电子阻挡层(EBL)的不同波长和铝含量来对LD的性能进行数值评估。这些LD采用多层结构,包括包层、波导层、多量子阱层、接触层和AlGaN EBL。通过分析模拟性能从理论上研究了EBL的影响机制。结果发现,对于短波长紫光LD,当EBL中的铝含量(x)接近0.25时,LD的电学和光学性能将达到最佳状态。对于长波长绿光LD,当EBL中的铝含量尽可能低时,它将实现最佳的电学和光学性能。为了进行更全面的评估,我们还比较了发射波长在紫光和绿光范围内(包括蓝青色)的LD的模拟结果。根据模拟结果,证实了EBL的铝含量对LD性能的影响随着波长的增加而增强。

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ACS Nanosci Au. 2022 Oct 28;3(1):84-93. doi: 10.1021/acsnanoscienceau.2c00041. eCollection 2023 Feb 15.
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Polarization-induced hole doping in wide-band-gap uniaxial semiconductor heterostructures.宽带隙单轴半导体异质结构中的偏振诱导空穴掺杂。
Science. 2010 Jan 1;327(5961):60-4. doi: 10.1126/science.1183226.
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An aluminium nitride light-emitting diode with a wavelength of 210 nanometres.
波长为210纳米的氮化铝发光二极管。
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