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半导体聚合物取向浮膜的微观结构构象对有机器件性能的影响。

The Influence of a Microstructural Conformation of Oriented Floating Films of Semiconducting Polymers on Organic Device Performance.

作者信息

Sharma Shubham, Gaurav Kumar Vivek, Nagamatsu Shuichi, Pandey Shyam S

机构信息

Graduate School of Life Science and Systems Engineering, Kyushu Institute of Technology, 2-4 Hibikino, Wakamatsu, Kitakyushu 808-0196, Japan.

Department of Computer Science and Electronics, Kyushu Institute of Technology, 680-4 Kawazu, Iizuka 820-8502, Japan.

出版信息

Polymers (Basel). 2024 Mar 5;16(5):710. doi: 10.3390/polym16050710.

Abstract

Extended π-conjugation with backbone-planarity-driven π-π stacking dominates charge transport in semiconducting polymers (SCPs). The roles of SCP film morphology and macromolecular conformation concerning the substrate in influencing charge transport and its impact on device performance have been a subject of extensive debate. Face-on SCPs promote out-of-plane charge transport primarily through π-π stacking, with conjugated polymeric chains assisting transport in connecting crystalline domains, whereas edge-on SCPs promote in-plane charge transport primarily through conjugation and π-π stacking. In this work, we fabricated three different types of devices, namely, organic field effect transistors, organic Schottky diodes, and organic bistable memristors, as representatives of planar and vertical devices. We demonstrate that a planar device, i.e., an organic field effect transistor, performs well in an edge-on conformation exhibiting a field-effect mobility of 0.12 cmVs and on/off ratio >10, whereas vertical devices, i.e., organic Schottky diodes and organic memristors, perform well in a face-on conformation, exhibiting exceptionally high on/off ratios of ~10 and 10, respectively.

摘要

具有主链平面性驱动的π-π堆积的扩展π共轭主导着半导体聚合物(SCP)中的电荷传输。SCP薄膜形态和与基底相关的大分子构象在影响电荷传输及其对器件性能的影响方面所起的作用一直是广泛争论的主题。面朝上的SCP主要通过π-π堆积促进面外电荷传输,共轭聚合物链在连接结晶域时协助传输,而边缘朝上的SCP主要通过共轭和π-π堆积促进面内电荷传输。在这项工作中,我们制造了三种不同类型的器件,即有机场效应晶体管、有机肖特基二极管和有机双稳态忆阻器,作为平面和垂直器件的代表。我们证明,平面器件,即有机场效应晶体管,在边缘朝上的构象中表现良好,场效应迁移率为0.12 cm²V⁻¹s⁻¹,开/关比>¹⁰⁵,而垂直器件,即有机肖特基二极管和有机忆阻器,在面朝上的构象中表现良好,分别表现出异常高的开/关比~¹⁰⁴和¹⁰³。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/de86/10933849/0366a8b2ac1c/polymers-16-00710-g001.jpg

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