Meng Jianping, Lee Chengkuo, Li Zhou
Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, China; School of Nanoscience and Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore; Center for Intelligent Sensors and MEMS, National University of Singapore, Singapore 117608, Singapore.
Sci Bull (Beijing). 2024 May 15;69(9):1342-1352. doi: 10.1016/j.scib.2024.03.003. Epub 2024 Mar 2.
The Schottky contact which is a crucial interface between semiconductors and metals is becoming increasingly significant in nano-semiconductor devices. A Schottky barrier, also known as the energy barrier, controls the depletion width and carrier transport across the metal-semiconductor interface. Controlling or adjusting Schottky barrier height (SBH) has always been a vital issue in the successful operation of any semiconductor device. This review provides a comprehensive overview of the static and dynamic adjustment methods of SBH, with a particular focus on the recent advancements in nano-semiconductor devices. These methods encompass the work function of the metals, interface gap states, surface modification, image-lowering effect, external electric field, light illumination, and piezotronic effect. We also discuss strategies to overcome the Fermi-level pinning effect caused by interface gap states, including van der Waals contact and 1D edge metal contact. Finally, this review concludes with future perspectives in this field.
肖特基接触作为半导体与金属之间的关键界面，在纳米半导体器件中变得越来越重要。肖特基势垒，也称为能量势垒，控制着耗尽层宽度以及载流子在金属 - 半导体界面的传输。控制或调节肖特基势垒高度（SBH）一直是任何半导体器件成功运行的关键问题。本文综述全面概述了SBH的静态和动态调节方法，特别关注纳米半导体器件的最新进展。这些方法包括金属的功函数、界面间隙态、表面改性、镜像降低效应、外部电场、光照和压阻效应。我们还讨论了克服由界面间隙态引起的费米能级钉扎效应的策略，包括范德华接触和一维边缘金属接触。最后，本文综述给出了该领域的未来展望。
