Zhou Pan-Ke, Li Yiping, Zeng Tao, Chee Mun Yin, Huang Yuxing, Yu Ziyue, Yu Hongling, Yu Hong, Huang Weiguo, Chen Xiong
State Key Laboratory of Photocatalysis on Energy and Environment, and Key Laboratory of Molecular Synthesis and Function Discovery, College of Chemistry, Fuzhou University, Fujian, 350108, China.
Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore.
Angew Chem Int Ed Engl. 2024 May 13;63(20):e202402911. doi: 10.1002/anie.202402911. Epub 2024 Apr 10.
Memristors are essential components of neuromorphic systems that mimic the synaptic plasticity observed in biological neurons. In this study, a novel approach employing one-dimensional covalent organic framework (1D COF) films was explored to enhance the performance of memristors. The unique structural and electronic properties of two 1D COF films (COF-4,4'-methylenedianiline (MDA) and COF-4,4'-oxydianiline (ODA)) offer advantages for multilevel resistive switching, which is a key feature in neuromorphic computing applications. By further introducing a TiO layer on the COF-ODA film, a built-in electric field between the COF-TiO interfaces could be generated, demonstrating the feasibility of utilizing COFs as a platform for constructing memristors with tunable resistive states. The 1D nanochannels of these COF structures contributed to the efficient modulation of electrical conductance, enabling precise control over synaptic weights in neuromorphic circuits. This study also investigated the potential of these COF-based memristors to achieve energy-efficient and high-density memory devices.
忆阻器是神经形态系统的重要组成部分,可模拟生物神经元中观察到的突触可塑性。在本研究中,探索了一种采用一维共价有机框架(1D COF)薄膜的新方法来提高忆阻器的性能。两种1D COF薄膜(COF - 4,4'-亚甲基二苯胺(MDA)和COF - 4,4'-氧二苯胺(ODA))独特的结构和电子特性为多级电阻开关提供了优势,这是神经形态计算应用中的一个关键特性。通过在COF - ODA薄膜上进一步引入TiO层,可以在COF - TiO界面之间产生内置电场,证明了利用COF作为构建具有可调电阻状态忆阻器平台的可行性。这些COF结构的一维纳米通道有助于有效调制电导,从而能够精确控制神经形态电路中的突触权重。本研究还探讨了这些基于COF的忆阻器实现节能和高密度存储设备的潜力。