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用于高效神经形态计算的基于双氧化还原活性共价有机框架的忆阻器

Dual Redox-active Covalent Organic Framework-based Memristors for Highly-efficient Neuromorphic Computing.

作者信息

Zhang Qiongshan, Che Qiang, Wu Dongchuang, Zhao Yunjia, Chen Yu, Xuan Fuzhen, Zhang Bin

机构信息

Key Laboratory for Advanced Materials and Joint International Research, Laboratory of Precision Chemistry and Molecular Engineering, School of Chemistry and Molecular Engineering, East China University of Science and Technology, Shanghai, 200237, China.

Shanghai Key Laboratory of Intelligent Sensing and Detection, East China University of Science and Technology, Shanghai, 200237, China.

出版信息

Angew Chem Int Ed Engl. 2024 Nov 11;63(46):e202413311. doi: 10.1002/anie.202413311. Epub 2024 Sep 20.

Abstract

Organic memristors based on covalent organic frameworks (COFs) exhibit significant potential for future neuromorphic computing applications. The preparation of high-quality COF nanosheets through appropriate structural design and building block selection is critical for the enhancement of memristor performance. In this study, a novel room-temperature single-phase method was used to synthesize Ta-Cu COF, which contains two redox-active units: trinuclear copper and triphenylamine. The resultant COF nanosheets were dispersed through acid-assisted exfoliation and subsequently spin-coated to fabricate a high-quality COF film on an indium tin oxide (ITO) substrate. The synergistic effect of the dual redox-active centers in the COF film, combined with its distinct crystallinity, significantly reduces the redox energy barrier, enabling the efficient modulation of 128 non-volatile conductive states in the Al/Ta-Cu COF/ITO memristor. Utilizing a convolutional neural network (CNN) based on these 128 conductance states, image recognition for ten representative campus landmarks was successfully executed, achieving a high recognition accuracy of 95.13 % after 25 training epochs. Compared to devices based on binary conductance states, the memristor with 128 conductance states exhibits a 45.56 % improvement in recognition accuracy and significantly enhances the efficiency of neuromorphic computing.

摘要

基于共价有机框架(COF)的有机忆阻器在未来神经形态计算应用中展现出巨大潜力。通过适当的结构设计和构建单元选择来制备高质量的COF纳米片对于提升忆阻器性能至关重要。在本研究中,采用了一种新型室温单相法合成Ta-Cu COF,其包含两个氧化还原活性单元:三核铜和三苯胺。通过酸辅助剥离分散所得的COF纳米片,随后旋涂以在氧化铟锡(ITO)衬底上制备高质量的COF薄膜。COF薄膜中双氧化还原活性中心的协同效应,结合其独特的结晶度,显著降低了氧化还原能垒,使得Al/Ta-Cu COF/ITO忆阻器中能够有效调制128种非易失性导电状态。利用基于这128种电导状态的卷积神经网络(CNN),成功实现了对十个代表性校园地标的图像识别,经过25个训练轮次后达到了95.13%的高识别准确率。与基于二元电导状态的器件相比,具有128种电导状态的忆阻器在识别准确率上提高了45.56%,并显著提高了神经形态计算的效率。

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