Semlali Elias, Avit Geoffrey, André Yamina, Gil Evelyne, Moskalenko Andriy, Shields Philip, Dubrovskii Vladimir G, Cattoni Andrea, Harmand Jean-Christophe, Trassoudaine Agnès
Université Clermont Auvergne, Clermont Auvergne INP, CNRS, Institut Pascal, F-63000 Clermont-Ferrand, France.
Centre for Nanoscience and Nanotechnology & Department of Electronic and Electrical Engineering, University of Bath, BA2 7AY Bath, United Kingdom.
Nanotechnology. 2024 Apr 12;35(26). doi: 10.1088/1361-6528/ad3741.
Selective area growth by hydride vapor phase epitaxy of GaN nanostructures with different shapes was investigated versus the deposition conditions including temperature and ammonia flux. Growth experiments were carried out on templates of GaN on sapphire masked with SiN. We discuss two occurrences related to axial and radial growth of GaN nanowires. A growth suppression phenomenon was observed under certain conditions, which was circumvented by applying the cyclic growth mode. A theoretical model involving inhibiting species was developed to understand the growth suppression phenomenon on the masked substrates. Various morphologies of GaN nanocrystals were obtained by controlling the competition between the growth and blocking mechanisms as a function of the temperature and vapor phase composition. The optimal growth conditions were revealed for obtaining regular arrays of ∼5m long GaN nanowires.
通过氢化物气相外延法研究了不同形状的GaN纳米结构的选择性区域生长与包括温度和氨流量在内的沉积条件之间的关系。在覆盖有SiN的蓝宝石上的GaN模板上进行了生长实验。我们讨论了与GaN纳米线轴向和径向生长相关的两种情况。在某些条件下观察到生长抑制现象，通过应用循环生长模式可以避免这种现象。建立了一个涉及抑制物种的理论模型来理解掩膜衬底上的生长抑制现象。通过控制生长和阻挡机制之间的竞争（作为温度和气相组成的函数），获得了各种形态的GaN纳米晶体。揭示了获得约5μm长的GaN纳米线规则阵列的最佳生长条件。
