Cho Yoonjin, Lee Sangwoo, Heo Seongwon, Bae Jin-Hyuk, Kang In-Man, Kim Kwangeun, Lee Won-Yong, Jang Jaewon
School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea.
School of Electronics Engineering, Kyungpook National University, Daegu 41566, Republic of Korea.
Nanomaterials (Basel). 2024 Mar 16;14(6):532. doi: 10.3390/nano14060532.
Herein, sol-gel-processed YO resistive random-access memory (RRAM) devices were fabricated. The top electrodes (TEs), such as Ag or Cu, affect the electrical characteristics of the YO RRAM devices. The oxidation process, mobile ion migration speed, and reduction process all impact the conductive filament formation of the indium-tin-oxide (ITO)/YO/Ag and ITO/YO/Cu RRAM devices. Between Ag and Cu, Cu can easily be oxidized due to its standard redox potential values. However, the conductive filament is easily formed using Ag TEs. After triggering the oxidation process, the formed Ag mobile metal ions can migrate faster inside YO active channel materials when compared to the formed Cu mobile metal ions. The fast migration inside the YO active channel materials successfully reduces the SET voltage and improves the number of programming-erasing cycles, i.e., endurance, which is one of the nonvolatile memory parameters. These results elucidate the importance of the electrochemical properties of TEs, providing a deeper understanding of how these factors influence the resistive switching characteristics of metal oxide-based atomic switches and conductive-metal-bridge-filament-based cells.
在此，制备了溶胶-凝胶法处理的氧化钇电阻式随机存取存储器（RRAM）器件。诸如银或铜之类的顶部电极（TE）会影响氧化钇RRAM器件的电学特性。氧化过程、移动离子迁移速度和还原过程都会影响氧化铟锡（ITO）/氧化钇/银和ITO/氧化钇/铜RRAM器件中导电细丝的形成。在银和铜之间，由于其标准氧化还原电位值，铜更容易被氧化。然而，使用银顶部电极更容易形成导电细丝。在触发氧化过程后，与形成的铜移动金属离子相比，形成的银移动金属离子在氧化钇活性沟道材料内部能够更快地迁移。在氧化钇活性沟道材料内部的快速迁移成功降低了设置电压并提高了编程-擦除循环次数，即耐久性，这是非易失性存储器参数之一。这些结果阐明了顶部电极电化学性质的重要性，为深入理解这些因素如何影响基于金属氧化物的原子开关和基于导电金属桥细丝的单元的电阻切换特性提供了帮助。
