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通过紫外线/臭氧辅助光化学退火工艺获得的柔性溶胶-凝胶处理的氧化钇电阻式随机存取存储器器件。

Flexible Sol-Gel-Processed YO RRAM Devices Obtained via UV/Ozone-Assisted Photochemical Annealing Process.

作者信息

Kim Hyeon-Joong, Kim Do-Won, Lee Won-Yong, Kim Kyoungdu, Lee Sin-Hyung, Bae Jin-Hyuk, Kang In-Man, Kim Kwangeun, Jang Jaewon

机构信息

School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Korea.

School of Electronics Engineering, Kyungpook National University, Daegu 41566, Korea.

出版信息

Materials (Basel). 2022 Mar 3;15(5):1899. doi: 10.3390/ma15051899.

DOI:10.3390/ma15051899
PMID:35269129
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8912058/
Abstract

Flexible indium tin oxide (ITO)/Y2O3/Ag resistive random access memory (RRAM) devices were successfully fabricated using a thermal-energy-free ultraviolet (UV)/ozone-assisted photochemical annealing process. Using the UV/ozone-assisted photochemical process, the organic residue can be eliminated, and thinner and smother Y2O3 films than those formed using other methods can be fabricated. The flexible UV/ozone-assisted photochemical annealing process-based ITO/Y2O3/Ag RRAM devices exhibited the properties of conventional bipolar RRAM without any forming process. Furthermore, the pure and amorphous-phase Y2O3 films formed via this process showed a decreased leakage current and an increased high-resistance status (HRS) compared with the films formed using other methods. Therefore, RRAM devices can be realized on plastic substrates using a thermal-energy-free UV/ozone-assisted photochemical annealing process. The fabricated devices exhibited a resistive window (ratio of HRS/low-resistance status (LRS)) of >104, with the HRS and LRS values remaining almost the same (i.e., limited deterioration occurred) for 104 s and up to 102 programming/erasing operation cycles.

摘要

采用无热能紫外（UV）/臭氧辅助光化学退火工艺成功制备了柔性氧化铟锡（ITO）/Y2O3/Ag电阻式随机存取存储器（RRAM）器件。利用UV/臭氧辅助光化学工艺，可以消除有机残留物，并且能够制备出比使用其他方法形成的Y2O3薄膜更薄且更光滑的薄膜。基于柔性UV/臭氧辅助光化学退火工艺的ITO/Y2O3/Ag RRAM器件展现出传统双极RRAM的特性，无需任何形成工艺。此外，通过该工艺形成的纯非晶相Y2O3薄膜与使用其他方法形成的薄膜相比，漏电流降低，高电阻状态（HRS）增加。因此，使用无热能UV/臭氧辅助光化学退火工艺可以在塑料基板上实现RRAM器件。所制备的器件呈现出大于104的电阻窗口（HRS与低电阻状态（LRS）之比），在104 s以及多达102次编程/擦除操作循环中，HRS和LRS值几乎保持不变（即发生有限的劣化）。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/aa27/8912058/ed3a6065b376/materials-15-01899-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/aa27/8912058/9f9e25e9ab11/materials-15-01899-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/aa27/8912058/6bd0c22cadd3/materials-15-01899-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/aa27/8912058/42a097e8d230/materials-15-01899-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/aa27/8912058/7c154c705cbf/materials-15-01899-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/aa27/8912058/2b2655bc1354/materials-15-01899-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/aa27/8912058/ca3385a7510c/materials-15-01899-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/aa27/8912058/4ee9a24fa112/materials-15-01899-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/aa27/8912058/092ee28249a7/materials-15-01899-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/aa27/8912058/ed3a6065b376/materials-15-01899-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/aa27/8912058/9f9e25e9ab11/materials-15-01899-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/aa27/8912058/6bd0c22cadd3/materials-15-01899-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/aa27/8912058/42a097e8d230/materials-15-01899-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/aa27/8912058/7c154c705cbf/materials-15-01899-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/aa27/8912058/2b2655bc1354/materials-15-01899-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/aa27/8912058/ca3385a7510c/materials-15-01899-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/aa27/8912058/4ee9a24fa112/materials-15-01899-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/aa27/8912058/092ee28249a7/materials-15-01899-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/aa27/8912058/ed3a6065b376/materials-15-01899-g009.jpg

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