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少层和薄膜二硫化钼忆阻器件中导致滞后现象的缺陷

Defects Contributing to Hysteresis in Few-Layer and Thin-Film MoS Memristive Devices.

作者信息

Abedin Saadman, Kurtash Vladislav, Mathew Sobin, Thiele Sebastian, Jacobs Heiko O, Pezoldt Jörg

机构信息

FG-Nanotechnologie, Institut für Mikro-und Nanoelektronik, Institut für Mikro-und Nanotechnologien MacroNano®, Institut für Werkstofftechnik, TU Ilmenau, Postfach 100565, 98684 Ilmenau, Germany.

出版信息

Materials (Basel). 2024 Mar 15;17(6):1350. doi: 10.3390/ma17061350.

DOI:10.3390/ma17061350
PMID:38541504
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10972285/
Abstract

Molybdenum disulfide, a two-dimensional material extensively explored for potential applications in non-von Neumann computing technologies, has garnered significant attention owing to the observed hysteresis phenomena in MoS FETs. The dominant sources of hysteresis reported include charge trapping at the channel-dielectric interface and the adsorption/desorption of molecules. However, in MoS FETs with different channel thicknesses, the specific nature and density of defects contributing to hysteresis remain an intriguing aspect requiring further investigation. This study delves into memristive devices with back-gate modulated channel layers based on CVD-deposited flake-based and thin-film-based MoS FETs, with a few-layer (FL) and thin-film (TF) channel thickness. Analysis of current-voltage (I-V) and conductance-frequency (Gp/ω-f) measurements led to the conclusion that the elevated hysteresis observed in TF MoS devices, as opposed to FL devices, stems from a substantial contribution from intrinsic defects within the channel volume, surpassing that of interface defects. This study underscores the significance of considering both intrinsic defects within the bulk and the interface defects of the channel when analyzing hysteresis in MoS FETs, particularly in TF FETs. The selection between FL and TF MoS devices depends on the requirements for memristive applications, considering factors such as hysteresis tolerance and scaling capabilities.

摘要

二硫化钼作为一种二维材料，因其在非冯·诺依曼计算技术中的潜在应用而被广泛研究，由于在二硫化钼场效应晶体管（MoS FETs）中观察到的滞后现象，它已引起了广泛关注。报道的滞后现象的主要来源包括沟道 - 电介质界面处的电荷俘获以及分子的吸附/解吸。然而，在具有不同沟道厚度的MoS FETs中，导致滞后现象的缺陷的具体性质和密度仍然是一个需要进一步研究的有趣方面。本研究深入探讨了基于化学气相沉积（CVD）的片状和薄膜型MoS FETs的具有背栅调制沟道层的忆阻器件，其沟道厚度为几层（FL）和薄膜（TF）。对电流 - 电压（I - V）和电导 - 频率（Gp/ω - f）测量结果的分析得出结论，与FL器件相比，在TF MoS器件中观察到的较高滞后现象源于沟道体积内固有缺陷的显著贡献，超过了界面缺陷的贡献。本研究强调了在分析MoS FETs中的滞后现象时，特别是在TF FETs中，考虑沟道内固有缺陷和界面缺陷的重要性。在FL和TF MoS器件之间的选择取决于忆阻应用的要求，需考虑诸如滞后容忍度和缩放能力等因素。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/acee/10972285/cf7269944860/materials-17-01350-g009.jpg
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本文引用的文献

1
2D materials for future heterogeneous electronics.二维材料在未来异质电子学中的应用。
Nat Commun. 2022 Mar 16;13(1):1392. doi: 10.1038/s41467-022-29001-4.
2
Emerging 2D Memory Devices for In-Memory Computing.用于内存计算的新兴二维存储器件。
Adv Mater. 2021 Jul;33(29):e2007081. doi: 10.1002/adma.202007081. Epub 2021 Jun 8.
3
Tailoring the transfer characteristics and hysteresis in MoS transistors using substrate engineering.利用衬底工程调整二硫化钼晶体管的传输特性和滞后现象。
Nanoscale. 2020 Dec 8;12(46):23817-23823. doi: 10.1039/d0nr05861k.
4
Memristors Based on 2D Materials as an Artificial Synapse for Neuromorphic Electronics.基于二维材料的忆阻器作为神经形态电子学的人工突触。
Adv Mater. 2020 Dec;32(51):e2002092. doi: 10.1002/adma.202002092. Epub 2020 Sep 27.
5
Memristive devices based on emerging two-dimensional materials beyond graphene.基于除石墨烯之外的新兴二维材料的忆阻器件。
Nanoscale. 2019 Jul 14;11(26):12413-12435. doi: 10.1039/c9nr02886b. Epub 2019 Jun 24.
6
A comparative study on top-gated and bottom-gated multilayer MoS transistors with gate stacked dielectric of AlO/HfO.具有AlO/HfO栅堆叠电介质的顶栅和底栅多层MoS晶体管的比较研究。
Nanotechnology. 2018 Jun 15;29(24):245201. doi: 10.1088/1361-6528/aab9cb. Epub 2018 Mar 27.
7
MoS2 transistors with 1-nanometer gate lengths.具有 1 纳米栅长的 MoS2 晶体管。
Science. 2016 Oct 7;354(6308):99-102. doi: 10.1126/science.aah4698. Epub 2016 Oct 6.
8
The intrinsic origin of hysteresis in MoS2 field effect transistors.二硫化钼场效应晶体管中滞后现象的内在起源。
Nanoscale. 2016 Feb 7;8(5):3049-56. doi: 10.1039/c5nr07336g.
9
Mapping of Low-Frequency Raman Modes in CVD-Grown Transition Metal Dichalcogenides: Layer Number, Stacking Orientation and Resonant Effects.化学气相沉积生长的过渡金属二硫属化物中低频拉曼模式的映射：层数、堆叠取向和共振效应
Sci Rep. 2016 Jan 14;6:19476. doi: 10.1038/srep19476.
10
DEVICE TECHNOLOGY. Nanomaterials in transistors: From high-performance to thin-film applications.器件技术。晶体管中的纳米材料：从高性能到薄膜应用。
Science. 2015 Aug 14;349(6249):aab2750. doi: 10.1126/science.aab2750.