Liang Xiao, Liu Yiqun, Zhong Tianjun, Yang Ting, Li Jie, Luo Li, Dong Gao, Chen Yanhong, Luo Xuelian, Tang Tingting, Bi Lei
Optoelectronic Sensor Devices and Systems Key Laboratory of Sichuan Provincial University, Chengdu University of Information Technology Chengdu 610225 China
National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China Chengdu 610054 China
RSC Adv. 2024 Mar 27;14(15):10209-10218. doi: 10.1039/d4ra01013b. eCollection 2024 Mar 26.
In this study, we discuss the tunability of valley splitting using first-principles calculations with a monolayer MoTe and layered ferromagnetic MnS heterostructure as an example. We observe that, due to the magnetic proximity effect (MPE) at the interface, a monolayer of MoTe can exhibit a significant valley splitting of 55.2 meV. The production of the interlayer dipoles with spin-adapted configuration could be the origin of MPE at the interface. Furthermore, the valley splitting can be regulated continuously by the perpendicular electric field and biaxial strain. Interestingly, the valley splitting increases with the increasing induced magnetic moments in MoTe by applying an electric field while the inverse laws are presented by applying biaxial strains, which indicates that the mechanisms of valley splitting manipulating in these two ways are quite different. The calculation results suggest that the electric field influences the electric dipole distributions at the interface, which determines the induced magnetic moments in monolayer MoTe, and results in valley splitting variations. However, biaxial strains not only affect MPE at the interface but also the intrinsic spin splitting caused by spin-orbital coupling (SOC) effects of monolayer MoTe itself and the latter is even the dominating mechanism of valley splitting variations.
在本研究中,我们以单层碲化钼(MoTe)和层状铁磁硫化锰(MnS)异质结构为例,利用第一性原理计算讨论了谷分裂的可调性。我们观察到,由于界面处的磁近邻效应(MPE),单层MoTe可表现出55.2毫电子伏特的显著谷分裂。具有自旋适配构型的层间偶极子的产生可能是界面处MPE的起源。此外,谷分裂可通过垂直电场和双轴应变连续调节。有趣的是,通过施加电场,谷分裂随MoTe中诱导磁矩的增加而增加,而施加双轴应变时则呈现相反规律,这表明这两种操纵谷分裂的机制有很大不同。计算结果表明,电场影响界面处的电偶极分布,这决定了单层MoTe中的诱导磁矩,并导致谷分裂变化。然而,双轴应变不仅影响界面处的MPE,还影响单层MoTe本身的自旋轨道耦合(SOC)效应引起的本征自旋分裂,而后者甚至是谷分裂变化的主导机制。