Chong Su Kong, Cheng Yang, Man Huiyuan, Lee Seng Huat, Wang Yu, Dai Bingqian, Tanabe Masaki, Yang Ting-Hsun, Mao Zhiqiang, Moler Kathryn A, Wang Kang L
Department of Electrical and Computer Engineering, University of California, Los Angeles, CA, 90095, USA.
Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA, 94305, USA.
Nat Commun. 2024 Apr 3;15(1):2881. doi: 10.1038/s41467-024-46689-8.
Achieving spin-pinning at the interface of hetero-bilayer ferromagnet/antiferromagnet structures in conventional exchange bias systems can be challenging due to difficulties in interface control and the weakening of spin-pinning caused by poor interface quality. In this work, we propose an alternative approach to stabilize the exchange interaction at the interface of an uncompensated antiferromagnet by utilizing a gradient of interlayer exchange coupling. We demonstrate this exchange interaction through a designed field training protocol in the odd-layer topological antiferromagnet MnBiTe. Our results reveal a remarkable field-trained exchange bias of up to ~ 400 mT, which exhibits high repeatability and can be easily reset by a large training field. Notably, this field-trained exchange bias effect persists even with zero-field initialization, presenting a stark contrast to the traditional field-cooled exchange bias. The highly tunable exchange bias observed in this single antiferromagnet compound, without the need for an additional magnetic layer, provides valuable insight into the exchange interaction mechanism. These findings pave the way for the systematic design of topological antiferromagnetic spintronics.
在传统的交换偏置系统中,由于界面控制困难以及界面质量不佳导致自旋钉扎减弱,要在异质双层铁磁体/反铁磁体结构的界面实现自旋钉扎具有挑战性。在这项工作中,我们提出了一种替代方法,通过利用层间交换耦合梯度来稳定未补偿反铁磁体界面处的交换相互作用。我们通过在奇数层拓扑反铁磁体MnBiTe中设计的场训练协议来证明这种交换相互作用。我们的结果揭示了高达约400 mT的显著场训练交换偏置,其具有高重复性,并且可以通过大的训练场轻松重置。值得注意的是,即使在零场初始化的情况下,这种场训练交换偏置效应仍然存在,这与传统的场冷交换偏置形成了鲜明对比。在这种单一反铁磁体化合物中观察到的高度可调谐交换偏置,无需额外的磁性层,为交换相互作用机制提供了有价值的见解。这些发现为拓扑反铁磁自旋电子学的系统设计铺平了道路。