Yu Si Eun, Lee Han Joo, Kim Min-Gu, Im Seongil, Lee Young Tack
Department of Electrical and Computer Engineering, Inha University, Incheon 22212, Republic of Korea.
Van der Waals Materials Research Center, Department of Physics, Yonsei University, Seoul 03722, Republic of Korea.
ACS Nano. 2024 Apr 30;18(17):11404-11415. doi: 10.1021/acsnano.4c01450. Epub 2024 Apr 17.
High-performance and low operating voltage are becoming increasingly significant device parameters to meet the needs of future integrated circuit (IC) processors and ensure their energy-efficient use in upcoming mobile devices. In this study, we suggest a hybrid dual-gate switching device consisting of the vertically stacked junction and metal-insulator-semiconductor (MIS) gate structure, named J-MISFET. It shows excellent device performances of low operating voltage (<0.5 V), drain current ON/OFF ratio (∼4.7 × 10), negligible hysteresis window (<0.5 mV), and near-ideal subthreshold slope (SS) (60 mV/dec), making it suitable for low-power switching operation. Furthermore, we investigated the switchable NAND/NOR logic gate operations and the photoresponse characteristics of the J-MISFET under the small supply voltage (0.5 V). To advance the applications further, we successfully demonstrated an integrated optoelectronic security logic system comprising 2-electric inputs (for encrypted data) and 1-photonic input signal (for password key) as a hardware security device for data protection. Thus, we believe that our J-MISFET, with its heterogeneous hybrid gate structures, will illuminate the path toward future device configurations for next-generation low-power electronics and multifunctional security logic systems in a data-driven society.
高性能和低工作电压正日益成为重要的器件参数，以满足未来集成电路（IC）处理器的需求，并确保其在即将推出的移动设备中实现节能使用。在本研究中，我们提出了一种由垂直堆叠的结和金属-绝缘体-半导体（MIS）栅极结构组成的混合双栅极开关器件，名为J-MISFET。它表现出优异的器件性能，如低工作电压（<0.5 V）、漏极电流开/关比（~4.7×10）、可忽略的滞后窗口（<0.5 mV）和接近理想的亚阈值斜率（SS）（60 mV/dec），使其适用于低功耗开关操作。此外，我们研究了J-MISFET在小电源电压（0.5 V）下的可切换与非/或非逻辑门操作和光响应特性。为了进一步推进应用，我们成功演示了一个集成的光电安全逻辑系统，该系统包括2个电输入（用于加密数据）和1个光子输入信号（用于密码密钥），作为用于数据保护的硬件安全设备。因此，我们相信，我们的具有异质混合栅极结构的J-MISFET将为数据驱动社会中的下一代低功耗电子设备和多功能安全逻辑系统的未来器件配置照亮道路。
