Zuo Yezhan, Xiong Xingyu, Yang Zhenzhong, Sang Yihui, Zhang Haolin, Meng Fanbo, Hu Renzong
Guangdong Provincial Key Laboratory of Advanced Energy Storage Materials, School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China.
School of Energy and Mechanical Engineering, Nanjing Normal University, Nanjing 210023, China.
Nanomaterials (Basel). 2024 Apr 10;14(8):660. doi: 10.3390/nano14080660.
Si-based anode is considered one of the ideal anodes for high energy density lithium-ion batteries due to its high theoretical capacity of 4200 mAh g. To accelerate the commercial progress of Si material, the multi-issue of extreme volume expansion and low intrinsic electronic conductivity needs to be settled. Herein, a series of nano-sized Si particles with conductive networks are synthesized via the dielectric barrier discharge plasma (DBDP) assisted milling. The p-milling method can effectively refine the particle sizes of pristine Si without destroying its crystal structure, resulting in large Brunauer-Emmett-Teller (BET) values with more active sites for Li ions. Due to their unique structure and flexibility, CNTs can be uniformly distributed among the Si particles and the prepared Si electrodes exhibit better structural stability during the continuous lithiation/de-lithiation process. Moreover, the CNT network accelerates the transport of ions and electrons in the Si particles. As a result, the nano-sized Si anodes with CNTs conductive network can deliver an extremely high average initial Coulombic efficiency (ICE) reach of 90.2% with enhanced cyclic property and rate capability. The C-PMSi-50:1 anode presents 615 mAh g after 100 cycles and 979 mAh g under the current density of 5 A g. Moreover, the manufactured Si||LiNiCoMnO pouch cell maintains a high ICE of >85%. This work may supply a new insight for designing the nano-sized Si and further promoting its commercial applications.
硅基负极由于其4200 mAh g的高理论容量,被认为是高能量密度锂离子电池的理想负极之一。为了加速硅材料的商业化进程,需要解决极端体积膨胀和低本征电子电导率等多方面问题。在此,通过介质阻挡放电等离子体(DBDP)辅助研磨合成了一系列具有导电网络的纳米级硅颗粒。p-研磨方法可以有效细化原始硅的粒径,而不破坏其晶体结构,从而得到具有更大比表面积(BET)值和更多锂离子活性位点的产物。由于其独特的结构和柔韧性,碳纳米管(CNTs)可以均匀分布在硅颗粒之间,并且所制备的硅电极在连续的锂化/脱锂过程中表现出更好的结构稳定性。此外,碳纳米管网络加速了硅颗粒中离子和电子的传输。结果,具有碳纳米管导电网络的纳米级硅负极可以实现高达90.2%的极高平均初始库仑效率(ICE),同时具有增强的循环性能和倍率性能。C-PMSi-50:1负极在100次循环后表现出615 mAh g的比容量,在5 A g的电流密度下为979 mAh g。此外,制造的Si||LiNiCoMnO软包电池保持>85%的高初始库仑效率。这项工作可能为设计纳米级硅并进一步推动其商业应用提供新的思路。