Radhakrishnan Gokul, Kim Kyunghoon, Droopad Ravi, Goyal Amit
TapeSolar Inc., Knoxville, TN, 37922, USA.
Ingram School of Engineering, Texas State University, San Marcos, TX, 78666, USA.
Sci Rep. 2024 May 2;14(1):10116. doi: 10.1038/s41598-024-59686-0.
Recent advances in semiconductor based electronic devices can be attributed to the technological demands of ever increasing, application specific markets. These rapidly evolving markets for devices such as displays, wireless communication, photovoltaics, medical devices, etc. are demanding electronic devices that are increasingly thinner, smaller, lighter and flexible. High-quality, III-V epitaxial thin-films deposited on single-crystal substrates have yielded extremely high-performance, but are extremely expensive and rigid. Here we demonstrate heteroepitaxial deposition of GaAs thin-films on large-grained, single-crystal-like, biaxially-aligned, flexible, metallic substrates. We use molecular beam epitaxy (MBE) for the controlled growth of high quality GaAs layers on lattice matched Ge capped, flexible metal substrates. The structural, optical, interfacial and electrical characteristics and properties of the heteroepitaxial GaAs layers are analyzed and discussed. The results show that heteroepitaxial GaAs layers with good crystalline and optoelectronic properties can be realized for flexible, III-V based semiconductor devices. III-V materials integrated on large-grained, single-crystal-like, flexible, metallic substrates offer a potential route towards fabrication of large-area, high-performance electronic devices.
基于半导体的电子器件最近的进展可归因于不断增长的特定应用市场的技术需求。这些快速发展的市场，如显示器、无线通信、光伏、医疗设备等，对电子器件的要求越来越高，要求其越来越薄、越来越小、越来越轻且具有柔韧性。沉积在单晶衬底上的高质量III-V族外延薄膜具有极高的性能，但极其昂贵且刚性较大。在此，我们展示了在大晶粒、类单晶、双轴取向、柔性金属衬底上异质外延生长GaAs薄膜。我们使用分子束外延（MBE）在晶格匹配的Ge覆盖的柔性金属衬底上可控生长高质量的GaAs层。对异质外延GaAs层的结构、光学、界面和电学特性及性能进行了分析和讨论。结果表明，对于柔性的基于III-V族的半导体器件，可以实现具有良好晶体和光电性能的异质外延GaAs层。集成在大晶粒、类单晶、柔性金属衬底上的III-V族材料为制造大面积、高性能电子器件提供了一条潜在途径。
