Lu Fangyun, Wang Huiliu, Zeng Mengqi, Fu Lei
College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, China.
iScience. 2022 Feb 1;25(3):103835. doi: 10.1016/j.isci.2022.103835. eCollection 2022 Mar 18.
Ultrathin III-V semiconductors have been receiving tremendous research interest over the past few years. Owing to their exotic structures, excellent physical and chemical properties, ultrathin III-V semiconductors are widely applied in the field of electronics, optoelectronics, and solar energy. However, the strong chemical bonds in layers are the bottleneck of the two-dimensionalization preparation process, which hinders the further development of ultrathin III-V semiconductors. Some effective methods to synthesize ultrathin III-V semiconductors have been reported recently. In this perspective, we briefly introduce the structures and properties of ultrathin III-V semiconductors firstly. Then, we comprehensively summarize the synthetic strategies of ultrathin III-V semiconductors, mainly focusing on space confinement, atomic substitution, adhesion energy regulation, and epitaxial growth. Finally, we summarize the current challenges and propose the development directions of ultrathin III-V semiconductors in the future.
在过去几年中，超薄III-V族半导体一直受到极大的研究关注。由于其独特的结构、优异的物理和化学性质，超薄III-V族半导体在电子、光电子和太阳能领域得到了广泛应用。然而，层内的强化学键是二维化制备过程的瓶颈，这阻碍了超薄III-V族半导体的进一步发展。最近已经报道了一些合成超薄III-V族半导体的有效方法。从这个角度出发，我们首先简要介绍超薄III-V族半导体的结构和性质。然后，我们全面总结了超薄III-V族半导体的合成策略，主要集中在空间限制、原子取代、粘附能调控和外延生长方面。最后，我们总结了当前面临的挑战，并提出了未来超薄III-V族半导体的发展方向。
