Homo-layer flexible BiTe-based films with high thermoelectric performance.

Here, we demonstrate unconventional scalable and sustainable manufacturing of flexible n-type BiTe films via physical vapor deposition and homo-layer fusion engineering. The achieved ultrahigh power factor of up to 30.0 microwatts per centimeter per square kelvin and ultralow lattice thermal conductivity of 0.38 watts per meter per kelvin at room temperature are attributed to the synergy of modulated modest carrier concentration and weighted mobility in homo-layer films. These results bring forth a maximum output power density of 300 watts per square meter at a temperature gradient of 60 kelvin and a normalized cooling factor of 0.6, which is sufficient to sustain consumer electronics with large-area manufacturing of up to 120 square centimeters. Our developed homo-layer deposition with industry compatibility and scalability potentials highlights a facile yet cost-effective strategy, not only for structure-property relation manipulation in inorganic semiconductors but also for solid-state electronic fabrication for heat harvesting and management frontiers.