College of Engineering, Shibaura Institute of Technology, Omiya Campus, 307 Fukasaku, Minuma-ku, Saitama City, Saitama 337-8570, Japan.
Muroran Institute of Technology, 27-1 Mitsumoto-cho, Muroran 050-8585, Hokkaido, Japan.
Nanotechnology. 2023 Jan 4;34(11). doi: 10.1088/1361-6528/aca980.
The crystallographic and transport properties of thin films fabricated by pulsed laser deposition and belonging to the Sm(FeNi)Sbfilled skutterudite system were studied with the aim to unveil the effect exerted by temperature and duration of thermal treatments on structural and thermoelectric features. The importance of annealing treatments in Ar atmosphere up to 523 K was recognized, and the thermal treatment performed at 473 K for 3 h was selected as the most effective in improving the material properties. With respect to the corresponding bulk compositions, a significant enhancement in phase purity, as well as an increase in electrical conductivity and a drop in room temperature thermal conductivity, were observed in annealed films. The low thermal conductivity, in particular, can be deemed as deriving from the reduced dimensionality and the consequent substrate/film interfacial stress, coupled with the nanometric grain size.
采用脉冲激光沉积法制备的 Sm(FeNi)Sbfilled skutterudite 体系薄膜的晶体学和输运性能研究旨在揭示温度和热处时间对结构和热电性能的影响。我们认识到在 Ar 气氛中退火处理至 523 K 的重要性，并选择在 473 K 下进行 3 h 的热退火处理，作为改善材料性能最有效的方法。与相应的块体成分相比，在退火薄膜中观察到了显著提高的相纯度，以及电导率的增加和室温热导率的降低。低的热导率，特别是，可以认为是来源于维度的降低和由此产生的基底/薄膜界面应力，再加上纳米级的晶粒尺寸。
