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基于聚集体尺寸的等离子体金纳米颗粒上二硫化钼的光致发光

Photoluminescence of MoS on Plasmonic Gold Nanoparticles Depending on the Aggregate Size.

作者信息

Nam Kiin, Im Jaeseung, Han Gang Hee, Park Jin Young, Kim Hyuntae, Park Sungho, Yoo Sungjae, Haddadnezhad MohammadNavid, Ahn Jae Sung, Park Kyoung-Duck, Choi Soobong

机构信息

Department of Physics, Incheon National University, Incheon 22012, Republic of Korea.

System Research & Development System Integration Team, Park Systems Corporation, Suwon 16229, Republic of Korea.

出版信息

ACS Omega. 2024 Apr 29;9(19):21587-21594. doi: 10.1021/acsomega.4c02442. eCollection 2024 May 14.

DOI:10.1021/acsomega.4c02442
PMID:38764616
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11097376/
Abstract

Transition metal dichalcogenides (TMDs) are promising candidates for ultrathin functional semiconductor devices. In particular, incorporating plasmonic nanoparticles into TMD-based devices enhances the light-matter interaction for increased absorption efficiency and enables control of device performance such as electronic, electrical, and optical properties. In this heterohybrid structure, manipulating the number of TMD layers and the aggregate size of plasmonic nanoparticles is a straightforward approach to tailoring device performance. In this study, we use photoluminescence (PL) spectroscopy, which is a commonly employed technique for monitoring device performance, to analyze the changes in electronic and optical properties depending on the number of MoS layers and the size of the gold nanoparticle (AuNP) aggregate under nonresonant and resonant excitation conditions. The PL intensity in monolayer MoS/AuNPs increases as the size of aggregates increases irrespective of the excitation conditions. The strain induced by AuNPs causes a red shift, but as the aggregates grow larger, the effect of p-doping increases and the blue shift becomes prominent. In multilayer MoS/AuNPs, quenched PL intensity is observed under nonresonant excitation, while enhancement is noted under resonant excitation, which is mainly contributed by p-doping and LSPR, respectively. Remarkably, the alteration in the spectral shape due to resonant excitation is evident solely in small aggregates of AuNPs across all layers.

摘要

过渡金属二硫属化物(TMDs)是超薄功能半导体器件的理想候选材料。特别是,将等离子体纳米颗粒纳入基于TMD的器件中,可增强光与物质的相互作用,提高吸收效率,并能控制器件性能,如电子、电学和光学性质。在这种异质混合结构中,控制TMD层的数量和等离子体纳米颗粒的聚集体尺寸是调整器件性能的直接方法。在本研究中,我们使用光致发光(PL)光谱(一种常用于监测器件性能的技术)来分析在非共振和共振激发条件下,电子和光学性质随MoS层数和金纳米颗粒(AuNP)聚集体尺寸的变化。无论激发条件如何,单层MoS/AuNPs中的PL强度都随着聚集体尺寸的增加而增加。AuNPs引起的应变导致红移,但随着聚集体变大,p型掺杂的影响增加,蓝移变得显著。在多层MoS/AuNPs中,在非共振激发下观察到PL强度猝灭,而在共振激发下观察到增强,这分别主要由p型掺杂和局域表面等离子体共振(LSPR)引起。值得注意的是,共振激发引起的光谱形状变化仅在所有层的AuNP小聚集体中明显。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/22cf/11097376/e64d2270acb3/ao4c02442_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/22cf/11097376/e031946268fc/ao4c02442_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/22cf/11097376/a29bbd31ae72/ao4c02442_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/22cf/11097376/099162677d96/ao4c02442_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/22cf/11097376/e64d2270acb3/ao4c02442_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/22cf/11097376/e031946268fc/ao4c02442_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/22cf/11097376/a29bbd31ae72/ao4c02442_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/22cf/11097376/099162677d96/ao4c02442_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/22cf/11097376/e64d2270acb3/ao4c02442_0004.jpg

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