Wu Jie, Yan Pengyu, Yang Daobin, Guan Haowei, Yang Shuncheng, Cao Xinyue, Liao Xiaochun, Ding Pengfei, Sun He, Ge Ziyi
Zhejiang Engineering Research Center for Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.
Adv Mater. 2024 Jul;36(28):e2401537. doi: 10.1002/adma.202401537. Epub 2024 May 27.
In the fabrication of inverted perovskite solar cells (PSCs), the wettability, adsorbability, and compactness of self-assembled monolayers (SAMs) on conductive substrates have critical impacts on the quality of the perovskite films and the defects at the buried perovskite-substrate interface, which control the efficiency and stability of the devices. Herein, three bisphosphonate-anchored indolocarbazole (IDCz)-derived SAMs, IDCz-1, IDCz-2, and IDCz-3, are designed and synthesized by modulating the position of the two nitrogen atoms of the IDCz unit to improve the molecular dipole moments and strengthen the π-π interactions. Regulating the work functions (WF) of FTO electrodes through molecular dipole moments and energy levels, the perovskite band bends upwards with a small offset for ITO/IDCz-3/perovskite, thereby promoting hole extraction and blocking electrons. As a result, the inverted PSC employing IDCz-3 as hole-collecting layer exhibits a champion PCE of 25.15%, which is a record efficiency for the multipodal SAMs-based PSCs. Moreover, the unencapsulated device with IDCz-3 can be stored for at least 1800 h with little degradation in performance.
在倒置钙钛矿太阳能电池(PSC)的制备过程中,导电基底上自组装单分子层(SAM)的润湿性、吸附性和致密性对钙钛矿薄膜的质量以及钙钛矿 - 基底掩埋界面处的缺陷具有关键影响,而这些因素会控制器件的效率和稳定性。在此,通过调节吲哚咔唑(IDCz)单元中两个氮原子的位置来设计并合成了三种双膦酸酯锚定的吲哚咔唑衍生的SAM,即IDCz - 1、IDCz - 2和IDCz - 3,以改善分子偶极矩并增强π - π相互作用。通过分子偶极矩和能级来调节FTO电极的功函数(WF),对于ITO/IDCz - 3/钙钛矿体系,钙钛矿能带向上弯曲且有小的偏移,从而促进空穴提取并阻挡电子。结果,采用IDCz - 3作为空穴收集层的倒置PSC表现出25.15%的最佳功率转换效率(PCE);这是基于多峰SAM的PSC的创纪录效率。此外,具有IDCz - 3的未封装器件可以存储至少1800小时,性能几乎没有下降。