Ramón José Manuel, Sánchez José G, Más-Montoya Miriam, Li Wenhui, Martínez-Ferrero Eugenia, Palomares Emilio, Curiel David
Department of Organic Chemistry - Faculty of Chemistry, University of Murcia, Murcia, 30100, Spain.
Institute of Chemical Research of Catalonia (ICIQ-iCERCA-BIST), Avda. Països Catalans, 16, Tarragona, E-43007, Spain.
Small. 2025 Jun;21(22):e2500067. doi: 10.1002/smll.202500067. Epub 2025 Apr 24.
The application of self-assembled molecules (SAMs) as selective charge transport layers in inverted perovskite solar cells (iPSCs) has attracted significant interest because of their ability to provide high-efficiency and stable devices. In this work, four dipodal SAMs are reported based on π-expanded indolo[2,3-a]carbazole, incorporated as hole-selective contacts in iPSCs. The presence of methoxy substituents and the spacer length in SAMs are modified to assess their influence on the device performance. For that, the ITO/SAM and ITO/SAM/PSCs interfaces are characterized in detail, including theoretical studies and analysis of the complete device performance. These results demonstrate the multifactorial effect that SAMs have on the growth of crystalline perovskite and the charge dynamics in the devices. The resulting iPSCs show power conversion efficiency (PCE) between 19.76% and 22.20% with fill factors exceeding 82% in all cases and good stability under continuous illumination. Notably, SAM combining unsubstituted indolocarbazole and longer pentyl spacer (5CPICZ) shows the highest PCE of 22.20%. In contrast, analogous SAMs with propyl spacers (3CPICZ) achiev a PCE of 22.01%. The experimental results reveal that the improved PCE reached with unsubstituted indolocarbazole SAMs is attributed to reduced charge recombination and longer carrier lifetime owing to effective perovskite surface passivation.
自组装分子(SAMs)作为倒置钙钛矿太阳能电池(iPSCs)中的选择性电荷传输层的应用,因其能够提供高效且稳定的器件而备受关注。在这项工作中,报道了四种基于π-扩展吲哚并[2,3-a]咔唑的双足SAMs,它们被用作iPSCs中的空穴选择性接触层。对SAMs中甲氧基取代基的存在和间隔长度进行了修饰,以评估它们对器件性能的影响。为此,对ITO/SAM和ITO/SAM/PSCs界面进行了详细表征,包括理论研究和对完整器件性能的分析。这些结果证明了SAMs对晶体钙钛矿生长和器件中电荷动力学的多因素影响。所得的iPSCs的功率转换效率(PCE)在19.76%至22.20%之间,所有情况下填充因子均超过82%,并且在连续光照下具有良好的稳定性。值得注意的是,结合未取代吲哚并咔唑和较长戊基间隔基的SAM(5CPICZ)显示出最高的PCE,为22.20%。相比之下,具有丙基间隔基的类似SAMs(3CPICZ)实现了22.01%的PCE。实验结果表明,未取代吲哚并咔唑SAMs实现的PCE提高归因于电荷复合减少以及由于有效的钙钛矿表面钝化而导致的载流子寿命延长。