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用于柔性光电探测器的梳状一维-一维氧化锌-硒化锌异质结构的合理设计,以实现其优异性能。

Rational design of comb-like 1D-1D ZnO-ZnSe heterostructures toward their excellent performance in flexible photodetectors.

作者信息

Liu Ming-Jin, Chen Hsuan-Chu, Yang Tse-Ning, Wu Shu-Chi, Kuo Yao-Jen, Cyu Ruei-Hong, Peng Yu-Ren, Chueh Yu-Lun

机构信息

Department of Materials Science and Engineering, National Tsing-Hua University, 30013, Taiwan.

College of Semiconductor Research, National Tsing-Hua University, Hsinchu, 30013, Taiwan.

出版信息

Nanoscale. 2024 Jun 13;16(23):11203-11210. doi: 10.1039/d3nr06617g.

Abstract

One-dimensional (1D) Zn-based heterostructures have attracted considerable interest in the field of photodetection because of their tunable properties, flexibility, and unique optoelectronic properties. However, designing 1D multi-component Zn-based heterostructures for advanced photodetectors is still a great challenge. Herein, comb-like 1D-1D ZnO-ZnSe heterostructures with ZnO and ZnSe nanowires (NWs) comprising the shaft and teeth of a comb are reported. The length of the ZnO NWs can be modulated in the range of 300-1200 nm. Microstructural characterizations confirm that the 1D heterostructure clearly shows the spatial distribution of individual components. The well-designed structure displays an extended broadband photoresponse and higher photosensitivity than pure ZnSe NWs. Furthermore, ZnSe NWs with an appropriate length of ZnO branches show increased photoresponses of 3835% and 798% compared to those of pure ZnSe NWs under green and red-light irradiation, respectively. In addition, the integrated flexible photodetector presents excellent folding endurance after 1000 bending tests. This well-designed structure has significant potential for other 1D-based semiconductors in optoelectronic applications.

摘要

一维(1D)锌基异质结构因其可调谐特性、柔韧性和独特的光电特性,在光探测领域引起了广泛关注。然而,设计用于先进光探测器的一维多组分锌基异质结构仍然是一项巨大挑战。在此,报道了一种梳状的1D-1D ZnO-ZnSe异质结构,其中ZnO和ZnSe纳米线(NWs)分别构成梳子的轴和齿。ZnO纳米线的长度可在300-1200nm范围内调节。微观结构表征证实,这种一维异质结构清晰地显示了各个组分的空间分布。精心设计的结构展现出扩展的宽带光响应,且比纯ZnSe纳米线具有更高的光敏性。此外,与纯ZnSe纳米线相比,具有适当长度ZnO分支的ZnSe纳米线在绿光和红光照射下的光响应分别提高了3835%和798%。此外,集成的柔性光探测器在经过1000次弯曲测试后仍表现出优异的折叠耐久性。这种精心设计的结构在光电子应用中对于其他基于一维的半导体具有巨大潜力。

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