基于静电纺丝ZnO纳米线阵列/PbS量子点薄膜异质结构的增强型紫外-可见-近红外及柔性光电探测器
An Enhanced UV-Vis-NIR an d Flexible Photodetector Based on Electrospun ZnO Nanowire Array/PbS Quantum Dots Film Heterostructure.
作者信息
Zheng Zhi, Gan Lin, Zhang Jianbing, Zhuge Fuwei, Zhai Tianyou
机构信息
State Key Laboratory of Material Processing and Die & Mould Technology School of Materials Science and Engineering Huazhong University of Science and Technology (HUST) Wuhan 430074 P. R. China.
School of Optical and Electronic Information Huazhong University of Science and Technology (HUST) Wuhan 430074 P. R. China.
出版信息
Adv Sci (Weinh). 2016 Dec 30;4(3):1600316. doi: 10.1002/advs.201600316. eCollection 2017 Mar.
ZnO nanostructure-based photodetectors have a wide applications in many aspects, however, the response range of which are mainly restricted in the UV region dictated by its bandgap. Herein, UV-vis-NIR sensitive ZnO photodetectors consisting of ZnO nanowires (NW) array/PbS quantum dots (QDs) heterostructures are fabricated through modified electrospining method and an exchanging process. Besides wider response region compared to pure ZnO NWs based photodetectors, the heterostructures based photodetectors have faster response and recovery speed in UV range. Moreover, such photodetectors demonstrate good flexibility as well, which maintain almost constant performances under extreme (up to 180°) and repeat (up to 200 cycles) bending conditions in UV-vis-NIR range. Finally, this strategy is further verified on other kinds of 1D nanowires and 0D QDs, and similar enhancement on the performance of corresponding photodetecetors can be acquired, evidencing the universality of this strategy.
基于氧化锌纳米结构的光电探测器在许多方面有着广泛应用，然而，其响应范围主要受限于由其带隙决定的紫外区域。在此，通过改进的电纺丝方法和交换过程制备了由氧化锌纳米线（NW）阵列/硫化铅量子点（QDs）异质结构组成的紫外-可见-近红外敏感氧化锌光电探测器。与基于纯氧化锌纳米线的光电探测器相比，基于异质结构的光电探测器不仅具有更宽的响应区域，而且在紫外范围内具有更快的响应和恢复速度。此外，这种光电探测器还表现出良好的柔韧性，在紫外-可见-近红外范围内，在极端（高达180°）和重复（高达200次循环）弯曲条件下，其性能几乎保持不变。最后，该策略在其他种类的一维纳米线和零维量子点上得到进一步验证，并且可以获得相应光电探测器性能的类似增强，证明了该策略的通用性。
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