Younsi Z, Meddour F, Bencherif H, Hossain M Khalid, Marasamy Latha, Sasikumar P, Revathy M S, Ghotekar Suresh, Karim Mohammad R, Ayyar Manikandan, Haldhar Rajesh, Rubel Mirza H K
LEREESI, Laboratory HNS-RE2SD, 05078, Batna, Algeria.
Institute of Electronics, Atomic Energy Research Establishment, Bangladesh Atomic Energy Commission, Dhaka, 1349, Bangladesh.
Sci Rep. 2024 May 30;14(1):12460. doi: 10.1038/s41598-024-56041-1.
The Schockley-Quisser (SQ) limit of 28.64% is distant from the SbS solar cells' record power conversion efficiency (PCE), which is 8.00%. Such poor efficiency is mostly owing to substantial interface-induced recombination losses caused by defects at the interfaces and misaligned energy levels. The endeavor of this study is to investigate an efficient SbS solar cell structure via accurate analytical modeling. The proposed model considers different recombination mechanisms such as non-radiative recombination, SbS/CdS interface recombination, Auger, SRH, tunneling-enhanced recombination, and their combined impact on solar cell performance. This model is verified against experimental work (Glass/ITO/CdS/SbS/Au) where a good coincidence is achieved. Several parameters effects such as thickness, doping, electronic affinity, and bandgap are scrutinized. The effect of both bulk traps located in CdS and SbS on the electrical outputs of the solar cell is analyzed thoroughly. Besides, a deep insight into the effect of interfacial traps on solar cell figures of merits is gained through shedding light into their relation with carriers' minority lifetime, diffusion length, and surface recombination velocity. Our research findings illuminate that the primary contributors to SbS degradation are interfacial traps and series resistance. Furthermore, achieving optimal band alignment by fine-tuning the electron affinity of CdS to create a Spike-like conformation is crucial for enhancing the immunity of the device versus the interfacial traps. In our study, the optimized solar cell configuration (Glass/ITO/CdS/SbS/Au) demonstrates remarkable performance, including a high short-circuit current (J) of 47.9 mA/cm, an open-circuit voltage (V) of 1.16 V, a fill factor (FF) of 54%, and a notable improvement in conversion efficiency by approximately 30% compared to conventional solar cells. Beyond its superior performance, the optimized SbS solar cell also exhibits enhanced reliability in mitigating interfacial traps at the CdS/SbS junction. This improved reliability can be attributed to our precise control of band alignment and the fine-tuning of influencing parameters.
肖克利 - 奎塞尔（SQ）极限为28.64%，与硫化锑太阳能电池8.00%的功率转换效率记录相差甚远。如此低的效率主要归因于界面处缺陷和能级不匹配导致的大量界面诱导复合损失。本研究旨在通过精确的分析建模来研究一种高效的硫化锑太阳能电池结构。所提出的模型考虑了不同的复合机制，如非辐射复合、硫化锑/硫化镉界面复合、俄歇复合、肖克利 - 里德 - 霍尔（SRH）复合、隧穿增强复合，以及它们对太阳能电池性能的综合影响。该模型通过与实验工作（玻璃/氧化铟锡/硫化镉/硫化锑/金）进行对比验证，二者吻合良好。对诸如厚度、掺杂、电子亲和势和带隙等多个参数的影响进行了详细研究。深入分析了位于硫化镉和硫化锑中的体陷阱对太阳能电池电输出的影响。此外，通过揭示界面陷阱与载流子少数载流子寿命、扩散长度和表面复合速度的关系，深入了解了界面陷阱对太阳能电池品质因数的影响。我们的研究结果表明，导致硫化锑性能下降的主要因素是界面陷阱和串联电阻。此外，通过微调硫化镉的电子亲和势以形成类似尖峰的构型来实现最佳能带对准，对于提高器件对界面陷阱的抗性至关重要。在我们的研究中，优化后的太阳能电池结构（玻璃/氧化铟锡/硫化镉/硫化锑/金）表现出卓越的性能，包括47.9 mA/cm的高短路电流（J）、1.16 V的开路电压（V）、54%的填充因子（FF），与传统太阳能电池相比，转换效率显著提高了约30%。除了其卓越的性能外，优化后的硫化锑太阳能电池在减轻硫化镉/硫化锑结处的界面陷阱方面还表现出更高的可靠性。这种提高的可靠性可归因于我们对能带对准的精确控制和对影响参数的微调。
