Tripathi Shailendra Kumar, Hussain Sarfraz, Kumar Raj, Sahu Sourabh
Department of Physics and Material Science, Jaypee University, Anoopshahr, India.
School of ECE, REVA University, Bangalore, India.
ScientificWorldJournal. 2024 May 23;2024:2003437. doi: 10.1155/2024/2003437. eCollection 2024.
Carbon nanotube-FETs (CNTFETs) have become a potential challenger because of their exceptional electrical properties and compatibility with conventional CMOS technology. The design and study of digitally tunable transconductance amplifiers (DTTAs) using CNTFETs are the main topics of this work. By utilizing the special characteristics of CNTFETs, the suggested DTTA design makes transconductance tunable, providing a versatile method of adjusting amplifier settings without requiring modifications to the hardware architecture. This study provides a complete description of the CNTFET modeling techniques utilized for realistic circuit simulations, along with a detailed analysis of the DTTA based on CNTFETs. The circuit is implemented using a 32 nm CNTFET model and verified results with HSPICE.
碳纳米管场效应晶体管(CNTFETs)因其卓越的电学性能以及与传统CMOS技术的兼容性,已成为一个潜在的挑战者。使用CNTFETs的数字可调跨导放大器(DTTAs)的设计与研究是这项工作的主要主题。通过利用CNTFETs的特殊特性,所提出的DTTA设计使跨导可调,提供了一种无需修改硬件架构就能调整放大器设置的通用方法。本研究完整描述了用于实际电路仿真的CNTFET建模技术,并对基于CNTFETs的DTTA进行了详细分析。该电路采用32纳米CNTFET模型实现,并通过HSPICE验证了结果。