Yoo Doheon, Choi Min-Jae
Department of Chemical and Biochemical Engineering, Dongguk University, Pildong-ro 1-gil, Jung-gu, Seoul 04620, Republic of Korea.
ACS Nano. 2024 Jun 18;18(24):16051-16058. doi: 10.1021/acsnano.4c05643. Epub 2024 Jun 6.
Indium phosphide (InP) quantum dots (QDs) have attracted significant interest as next-generation light-emitting materials. However, the synthesis of blue-emitting InP-based QDs has lagged behind that of established green- and red-emitting InP QDs. Herein, we present a strategy to synthesize blue-emitting QDs by forming an InGaP alloy composition. The introduction of asymmetric In-carboxylate and Ga-carboxylate complexes resulted in a balanced synthetic reactivity between In-P and Ga-P, leading to the formation of InGaP alloyed QDs. The resultant InGaP alloyed QDs exhibited a broad range of photoluminescence (PL) tunability, spanning from 535 nm (InP) to 465 nm (InGaP), depending on the In/Ga ratio used in the synthesis. In contrast, synthesis with symmetric In-carboxylate and Ga-carboxylate complexes produced a core/shell structure of InP/GaP QDs, which did not exhibit a blue shift of the PL peak with Ga addition. By employing a core/shell structure of InGaP/ZnS QDs, we achieved a PL quantum yield of 42% at 475 nm. This work highlights the material-processing strategy essential for forming alloyed structures in III-V ternary systems.
磷化铟（InP）量子点（QDs）作为下一代发光材料引起了广泛关注。然而，基于InP的蓝色发光量子点的合成落后于已成熟的绿色和红色发光InP量子点。在此，我们提出一种通过形成InGaP合金成分来合成蓝色发光量子点的策略。不对称的铟羧酸盐和镓羧酸盐配合物的引入导致In-P和Ga-P之间的合成反应性达到平衡，从而形成InGaP合金量子点。所得的InGaP合金量子点表现出广泛的光致发光（PL）可调性，根据合成中使用的In/Ga比例，范围从535 nm（InP）到465 nm（InGaP）。相比之下，使用对称的铟羧酸盐和镓羧酸盐配合物进行合成会产生InP/GaP量子点的核壳结构，随着镓的添加，其PL峰没有出现蓝移。通过采用InGaP/ZnS量子点的核壳结构，我们在475 nm处实现了42%的PL量子产率。这项工作突出了在III-V三元体系中形成合金结构所必需的材料加工策略。
