Zhang Nianjie, Li Jiaqi, Sui Nianzi, Kang Kaixiang, Deng Meng, Shao Shuangshuang, Gu Weibing, Liang Lijuan, Li Min, Zhao Jianwen
School of Printing and Packaging Engineering, Beijing Institute of Graphic Communication, Beijing 102627, China.
Key Laboratory of Semiconductor Display Materials and Chips, Printable Electronics Research Center, Division of Nanodevices and Related Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou 215123, China.
Nano Lett. 2024 Jun 26;24(25):7688-7697. doi: 10.1021/acs.nanolett.4c01691. Epub 2024 Jun 13.
Radiation-tolerance and repairable flexible transistors and integrated circuits (ICs) with low power consumption have become hot topics due to their wide applications in outer space, nuclear power plants, and X-ray imaging. Here, we designed and developed novel flexible semiconducting single-walled carbon nanotube (sc-SWCNT) thin-film transistors (TFTs) and ICs. Sc-SWCNT solid-electrolyte-gate dielectric (SEGD) TFTs showcase symmetric ambipolar characteristics with flat-band voltages (V) of ∼0 V, high I/I ratios (>10), and the recorded irradiation resistance (up to 22 Mrad). Moreover, flexible sc-SWCNT ICs, including CMOS-like inverters and NAND and NOR logic gates, have excellent operating characteristics with low power consumption (≤8.4 pW) and excellent irradiation resistance. Significantly, sc-SWCNT SEGD TFTs and ICs after radiation with a total irradiation dose (TID) ≥ 11 Mrad can be repaired after thermal heating at 100 °C. These outstanding characteristics are attributed to the designed device structures and key core materials including SEGD and sc-SWCNT.
