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利用纸基增强型碳纳米管晶体管的超低功耗和耐辐射互补金属氧化物半导体电子器件。

Ultralow-Power and Radiation-Tolerant Complementary Metal-Oxide-Semiconductor Electronics Utilizing Enhancement-Mode Carbon Nanotube Transistors on Paper Substrates.

作者信息

Wang Xin, Zhu Maguang, Li Xiaoqian, Qin Zongze, Lu Guanghao, Zhao Jianwen, Zhang Zhiyong

机构信息

Division of Nanodevices and Related Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province, 215123, P.R. China.

Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, 100871, P.R. China.

出版信息

Adv Mater. 2022 Oct;34(40):e2204066. doi: 10.1002/adma.202204066. Epub 2022 Sep 2.

DOI:10.1002/adma.202204066
PMID:36030367
Abstract

The development of eco-friendly, ultralow-power and easy-to-process electronics is facing dominant challenges in emerging off-the-grid applications, such as the Internet of Things (IoTs) and extreme environment explorations at the south/north pole, in the deep sea, and in outer space. Eco-friendly, biodegradable, lightweight, and flexible paper-based electronics can provide many new possibilities for next-generation devices and circuits. Here, enhancement-mode (E-mode, remaining off state at zero gate voltages) carbon nanotube (CNT) complementary metal-oxide-semiconductor (CMOS) thin-film transistors (TFTs) are built on paper substrates through a printing-based process. Benefitting from the CMOS circuit style and E-mode transistors, the fabricated CMOS inverters exhibit high voltage gains (more than 11) and noise margins (up to 75% 1/2 V at V of 0.4 V), and rail-to-rail operation down to a V as low as 0.2 V and record low power dissipation as low as 0.0124 pW μm . Furthermore, the transistors and integrated circuits (ICs) show an excellent radiation tolerance of a total ionizing dose (TID) exceeding 2 Mrad with a high dose rate of 365 rad s . The record power consumption and outstanding radiation tolerance behavior achieved in paper-based and easy-to-process CNT electronics are attractive for emerging energy-saving and environmentally friendly ICs in harsh environment (such as outer-space) applications.

摘要

在新兴的离网应用中,如物联网(IoT)以及在南极/北极、深海和外层空间的极端环境探索中,开发环保、超低功耗且易于加工的电子产品面临着重大挑战。环保、可生物降解、轻质且灵活的纸质电子产品可为下一代设备和电路提供许多新的可能性。在此,通过基于印刷的工艺在纸质基板上制造增强型(E模式,在零栅极电压下保持关断状态)碳纳米管(CNT)互补金属氧化物半导体(CMOS)薄膜晶体管(TFT)。受益于CMOS电路风格和E模式晶体管,所制造的CMOS反相器具有高电压增益(超过11)和噪声容限(在0.4 V的V时高达75% 1/2 V),并且在低至0.2 V的V下实现轨到轨操作,记录的低功耗低至0.0124 pW·μm。此外,晶体管和集成电路(IC)在365 rad s的高剂量率下表现出超过2 Mrad的总电离剂量(TID)的优异辐射耐受性。在纸质且易于加工的CNT电子产品中实现的创纪录功耗和出色的辐射耐受性能对于恶劣环境(如外层空间)应用中的新兴节能和环保IC具有吸引力。

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